J176 Vishay, J176 Datasheet
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Specifications of J176
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J176 Summary of contents
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... The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). Vishay Siliconix J174 SST174 J175 SST175 J176 SST176 J177 SST177 Typ (ns Analog Switches ...
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... J/SST174/175/176/177 Series Vishay Siliconix Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage b Saturation Drain Current Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage Dynamic ...
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... MHz iss rss MHz V = – – kHz t d(on GS(L) GS(L) GS(H) GS(H) See Switching Circuit t d(off Vishay Siliconix _ Limits J/SST176 J/SST177 a Typ Min Max Min Max 0.8 –2 –35 –1.5 0. 0.01 –0.01 –1 –5 250 –0.7 4.5 20 250 Unit V 2.25 – ...
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... J/SST174/175/176/177 Series Vishay Siliconix On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 200 160 r DS 120 –1 mA – DSS – Gate-Source Cutoff Voltage (V) GS(off) Output Characteristics – GS(off) –20 –15 –10 – –4 –8 –12 V – Drain-Source Voltage (V) DS Output Characteristics –2 ...
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... V – Gate-Source Voltage (V) GS Document Number: 70257 S-04030—Rev. E, 04-Jun-01 J/SST174/175/176/177 Series – 100 100 0 100 V = – Vishay Siliconix Turn-Off Switching 1 GS(off 1.5 V d(off) GS(off – GS(H) GS( –3 –6 –9 –12 I – Drain Current (mA) D Gate Leakage Current I = – – ...
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... J/SST174/175/176/177 Series Vishay Siliconix 174 175 V –10 V – 560 W 750 W 1800 100 W 220 W 390 –15 mA –7 mA –3 mA D(on) *Non-inductive Rise Time < Rise Time 0.4 ns Fall Time < Input Resistance 10 MW Pulse Width 100 ns Input Capacitance 1.5 pF PRF 1 MHz See Typical Characteristics curves for changes. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...