NE3210S01-A California Eastern Labs, NE3210S01-A Datasheet - Page 3

• Manufacturer Part Number: NE3210S01-A
• Manufacturer: California Eastern Labs

Specifications of NE3210S01-A

• Configuration: Single Dual Source
• Gate-source Voltage (max): 3V
• Drain Current (max): 70mA
• Drain-source Volt (max): 4V
• Operating Temperature (max): 125C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Lead Free Status / RoHS Status: Compliant

TYPICAL PERFORMANCE CURVES
250
200
150
100
0.5
1.0
60
50
40
30
20
10
50
0
0
0
1
NOISE FIGURE & ASSOCIATED
TOTAL POWER DISSIPATION vs.
0.5
Drain to Source Voltage, V
DRAIN TO SOURCE VOLTAGE
Ambient Temperature, T
AMBIENT TEMPERATURE
GAIN vs. FREQUENCY
50
2
1.0
DRAIN CURRENT vs.
NF
G
Frequency, f (GHz)
A
1.5
100
4
2.0
6
150
8 10
2.5
V
GS
3.0
A
= 0 V
14
DS
V
I
200
(°C)
-0.45 V
D
DS
-0.54 V
-0.09 V
-0.36 V
= 10 mA
-0.18 V
(V)
-0.27 V
= 2 V
3.5
20
250
4.0
30
24
20
16
12
8
4
(T
A
= 25°C)
2.0
1.5
1.0
0.5
24
20
16
12
60
50
40
30
20
10
4
8
0
0
-1.20
MAXIMUM AVAILABLE GAIN, FORWARD
1
INSERTION GAIN vs. FREQUENCY
NOISE FIGURE and ASSOCIATED
V
f = 12 GHz
V
DS
DS =2V
Gate to Source Voltage, V
GATE TO SOURCE VOLTAGE
-1.0
= 2 V
GAIN vs. DRAIN CURRENT
2
DRAIN CURRENT vs.
Drain Current, I
|S
MSG.
Frequency, f (GHz)
21S
-0.8
10
|
2
4
-0.6
NF
6
G
A
8 10
D
-0.4
20
(mA)
MAG.
GS
14
V
I
-0.2
D
DS
= 10 mA
(V)
= 2 V
20
0
30
30
15
14
13
12
11
100
85
70
45
30
15
0