2N5196 Vishay, 2N5196 Datasheet

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2N5196

Manufacturer Part Number
2N5196
Description
Manufacturer
Vishay
Datasheet

Specifications of 2N5196

Channel Type
N
Configuration
Dual
Gate-source Voltage (max)
-50V
Drain-gate Voltage (max)
-50V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
6
Package Type
TO-71
Lead Free Status / RoHS Status
Not Compliant
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with I
Gate-Drain, Gate-Source Voltage
Gate Current
Lead Temperature (
Storage Temperature
Operating Junction Temperature
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise
D High CMRR: 100 dB
Part Number
2N5196
2N5197
2N5198
2N5199
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
/
16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
” from case for 10 sec.)
GS(off)
–0.7 to –4
–0.7 to –4
–0.7 to –4
–0.7 to –4
. . . . . . . . . . . . . . . . . . . . . . . . . .
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
Monolithic N-Channel JFET Duals
V
guaranteed at V
(BR)GSS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
. . . . . . . . . . . . . . . . . .
Accuracy
–50
–50
–50
–50
Min (V)
D
1
–65 to 200_C
–55 to 150_C
DG
G
S
1
g
= 20 V.
1
2
fs
300 _C
50 mA
–50 V
Min (mS)
1
3
1
1
1
1
Top View
TO-71
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
Power Dissipation :
Notes
a.
b.
I
G
6
4
Derate 2 mW/_C above 85_C
Derate 4 mW/_C above 85_C
5
Max (pA)
–15
–15
–15
–15
G
S
2
2
D
2
2N5196/5197/5198/5199
jV
GS1
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
D High Speed Comparators
D Impedance Converters
Per Side
Total
– V
Single-Ended Input Amps
b
GS2
. . . . . . . . . . . . . . . . . . . . . . . . . . .
10
15
5
5
a
j Max (mV)
. . . . . . . . . . . . . . . . . . . . . . . .
Vishay Siliconix
www.vishay.com
250 mW
500 mW
8-1

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2N5196 Summary of contents

Page 1

... D High System Sensitivity D High CMRR: 100 dB D Minimum Error with Large Input Signal The 2N5196/5197/5198/5199 JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, ...

Page 2

... kHz | –g os1 os2 = 200 – 200 mA CMRR Limits 2N5196 2N5197 a Typ Min Max Min –57 –50 –50 –2 –0.7 –4 –0.7 3 0.7 7 0.7 –10 –25 –20 –50 –5 –15 –15 –0.8 –1.5 –0.2 –3.8 –0.2 2 0.8 ...

Page 3

... kHz | –g os1 os2 = 200 – 200 mA CMRR 2N5196/5197/5198/5199 Vishay Siliconix Limits 2N5198 2N5199 a Typ Min Max Min –57 –50 –50 –2 –0.7 –4 –0.7 3 0.7 7 0.7 –10 –25 –20 –50 –5 –15 –15 –0.8 –1.5 –0.2 –3.8 –0.2 2 ...

Page 4

... Vishay Siliconix Drain Current and Transconductance vs. Gate-Source Cutoff Voltage DSS DSS kHz 0 0 –1 –2 –3 V – Gate-Source Cutoff Voltage (V) GS(off) Output Characteristics –2 V GS(off – Drain-Source Voltage (V) DS Output Characteristics –2 V GS(off) V 1.6 1.2 0.8 0 0.2 0.4 0.6 V – Drain-Source Voltage (V) DS www ...

Page 5

... V = –2 V GS(off) 400 200 0 1 2N5196/5197/5198/5199 Vishay Siliconix Gate-Source Differential Voltage vs. Drain Current 25_C A 2N5199 2N5196 0.01 0.1 I – Drain Current (mA) D Common Mode Rejection Ratio vs. Drain Current DV DG CMRR = 20 log – GS1 GS2 – – 0.01 0.1 I – Drain Current (mA) D On-Resistance vs ...

Page 6

... Vishay Siliconix Common-Source Input Capacitance vs. Gate-Source Voltage MHz –4 –8 –12 V – Gate-Source Voltage (V) GS Equivalent Input Noise Voltage vs. Frequency 200 100 – Frequency (Hz) Common-Source Forward Transconductance vs. Drain Current 2 –2 V GS(off) 2.0 1.5 25_C 1.0 0.5 0 0.01 0.1 I – Drain Current (mA) D www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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