2N4117A Vishay, 2N4117A Datasheet - Page 3

Transistor

2N4117A

Manufacturer Part Number
2N4117A
Description
Transistor
Manufacturer
Vishay
Datasheets

Specifications of 2N4117A

Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
-40V
Operating Temperature (min)
-55C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Breakdown Voltage Vbr
-40V
Gate-source Cutoff Voltage Vgs(off) Max
-1.8V
No. Of Pins
4
Continuous Drain Current Id
90µA
Gate-source Breakdown Voltage
-40V
Mounting Type
Through Hole
Current Rating
50mA
Gate-source Cutoff Voltage
-1.8V
Rohs Compliant
No
Lead Free Status / RoHS Status
Not Compliant

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TYPICAL CHARACTERISTICS (T
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
1000
800
600
400
200
100
15
12
80
60
40
20
0
9
6
3
0
0
0
0
0
On-Resistance and Output Conductance
I
g
f = 1 kHz
DSS
fs
Drain Current and Transconductance
V
@ V
V
V
@ V
GS(off)
vs. Gate-Source Cutoff Voltage
GS(off)
vs. Gate-Source Cutoff Voltage
GS(off)
−1
−1
4
r
DS
DS
g
V
DS
fs
Output Characteristics
DS
= 10 V, V
= −0.7 V
− Gate-Source Cutoff Voltage (V)
− Gate-Source Cutoff Voltage (V)
= 10 V, V
− Drain-Source Voltage (V)
r
g
f = 1 kHz
DS
os
−2
−2
8
@ I
@ V
GS
GS
= 0 V
D
= 0 V
DS
= 10 mA, V
= 10 V, V
−3
−3
12
g
I
DSS
os
GS
GS
= 0 V
= 0 V
V
−4
16
−4
GS
A
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
= 0 V
= 25_C UNLESS OTHERWISE NOTED)
−5
20
−5
300
240
180
120
60
0
5
4
3
2
1
0
100 pA
0.1 pA
10 pA
1 nA
1 pA
200
160
120
500
400
300
200
100
80
40
0
0
0.01
0
0
Common-Source Forward Transconductance
V
V
GS(off)
GS(off)
2N/PN/SST4117A Series
T
V
A
GS(off)
T
= −55_C
T
4
A
6
= −2.5 V
A
= −2.5 V
V
= 125_C
V
= 25_C
DS
Output Characteristics
Gate Leakage Current
= −2.5 V
DG
I
− Drain-Source Voltage (V)
D
vs. Drain Current
− Drain-Gate Voltage (V)
− Drain Current (mA)
125_C
12
8
I
GSS
0.1
10 mA
@ 25_C
Vishay Siliconix
25_C
18
12
10 mA
V
f = 1 kHz
I
GSS
DS
100 mA
V
= 10 V
100 mA
@ 125_C
GS
16
24
−1.0 V
−1.5 V
−2.0 V
−0.5 V
www.vishay.com
= 0 V
30
20
1
3

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