SST112-T1-E3 Vishay, SST112-T1-E3 Datasheet
SST112-T1-E3
Specifications of SST112-T1-E3
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SST112-T1-E3 Summary of contents
Page 1
... Derate 2.8 mW/_C above 25_C J/SST111 Series Vishay Siliconix J111 SST111 J112 SST112 J113 SST113 D Analog Switches D Choppers D Sample-and-Hold D Normally “On” Switches D Current Limiters series, 2N4856A/4857A/4858A, TO-236 (SOT-23 Top View SST111 (C1)* SST112 (C2)* SST113 (C3)* *Marking Code for TO-236 www.vishay.com and 350 mW 360 mW 7-1 ...
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... V 0.005 125_C 0 0 kHz kHz MHz kHz GS(H) GS(H) See Switching Circuit 6 15 Limits J/SST112 J/SST113 Max Min Max Min Max Unit –35 – –10 –1 –5 – –1 –1 – 100 100 NCB Document Number: 70232 S-04028—Rev. E, 04-Jun-01 ...
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... Document Number: 70232 S-04028—Rev. E, 04-Jun-01 _ 200 = 0 160 I DSS 120 –8 – –2 V GS(off) –4 V – 105 125 ) –2 V GS(off J/SST111 Series Vishay Siliconix On-Resistance vs. Drain Current 100 –2 V GS(off –4 V – – Drain Current (mA) D Turn-On Switching 5 t approximately independent – ...
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... J/SST111 Series Vishay Siliconix Noise Voltage vs. Frequency 100 100 – Frequency (Hz) Gate Leakage Current 125_C 100 25_C 0 – Drain-Gate Voltage (V) DG Common-Gate Forward Admittance 100 25_C A – 0.1 100 200 f – Frequency (MHz) www.vishay.com 7-4 _ Forward Transconductance and Output Conductance 50 40 ...
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... Frequency (MHz) Output Characteristics –4 V GS(off 0.2 0.4 0.6 V – Drain-Source Voltage (V) DS J/SST111 J/SST112 V –12 V –7 V GS(L) 800 W 1600 D(on) *Non-inductive Rise Time < Rise Time 0.4 ns Fall Time < Input Resistance 10 MW Pulse Width 100 ns Input Capacitance 1.5 pF ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...