MRFG35010ANT1 Freescale, MRFG35010ANT1 Datasheet

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MRFG35010ANT1

Manufacturer Part Number
MRFG35010ANT1
Description
Manufacturer
Freescale
Datasheet

Specifications of MRFG35010ANT1

Configuration
Single Dual Source
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant
© Freescale Semiconductor, Inc., 2006, 2008 - 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: V
• 9 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
130 mA, P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Case Temperature 77°C, 1 W CW
Select Documentation/Application Notes - AN1955.
Power Gain — 10 dB
Efficiency — 25%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
out
= 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz,
(1)
Test Methodology
Test Methodology
Characteristic
Rating
DD
= 12 Volts, I
DQ
Rating
=
3
Symbol
Symbol
V
R
V
T
T
P
DSS
Package Peak Temperature
θJC
GS
stg
ch
in
Document Number: MRFG35010AN
MRFG35010ANT1
260
CASE 466 - 03, STYLE 1
3.5 GHz, 9 W, 12 V
IV (Minimum)
A (Minimum)
2 (Minimum)
- 65 to +150
GaAs PHEMT
Value
POWER FET
Class
Value
175
6.5
15
33
PLASTIC
- 5
PLD - 1.5
(2)
MRFG35010ANT1
Rev. 2, 6/2009
°C/W
Unit
dBm
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRFG35010ANT1 Summary of contents

Page 1

... Rating Package Peak Temperature 3 Rev. 2, 6/2009 3.5 GHz POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Value Unit 15 Vdc - 5 Vdc 33 dBm - 65 to +150 °C 175 °C (2) Value Unit 6.5 °C/W Class 2 (Minimum) A (Minimum) IV (Minimum) Unit 260 °C MRFG35010ANT1 1 ...

Page 2

... W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 οhm system) V Output Power Compression Point, CW MRFG35010ANT1 2 = 25°C unless otherwise noted) A Symbol I DSS ...

Page 3

... Microstrip Rogers 4350, 0.020″, ε = 3.5 r Part Number Manufacturer 08051J0R5BBT AVX 06035J0R2BBT AVX 06035J0R5BBT AVX 08051J6R8BBT AVX 100A100JP150XT ATC 100A101JP150XT ATC 100B101JP500XT ATC 100B102JP50XT ATC CDR33BX104AKWS Kemet 200B393KP50XT ATC GRM55DR61H106KA88B Murata P51ETR- ND Newark MRFG35010ANT1 V SUPPLY C12 3 ...

Page 4

... C10 C9 C11 C1 Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35010ANT1 4 C8 C15 C7 C16 C6 C17 C5 C18 C14 C13 C12 C19 C20 C22 C21 MRFG35010XX, Rev Device Data Freescale Semiconductor ...

Page 5

... S L IRL ACPR OUTPUT POWER (dBm) out Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power and Γ are the impedances presented to the DUT −10 −15 −20 −25 −30 − MRFG35010ANT1 5 ...

Page 6

... Figure 5. Single - Carrier W - CDMA Power Gain −10 −20 −30 −40 −50 −60 20 NOTE: Data is generated from the test circuit shown. MRFG35010ANT1 6 TYPICAL CHARACTERISTICS Vdc 130 mA 3550 MHz DS DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8 0.01% Probability (CCDF η OUTPUT POWER (dBm) ...

Page 7

... DD DQ out source load MHz W W 3550 4.0 - j22.6 4.5 - j15 Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load source Output Matching Network MRFG35010ANT1 7 ...

Page 8

... MRFG35010ANT1 Vdc 130 mA 25°C, 50 ohm system ∠ φ 4.019 84.19 0.020 3.663 82.53 0.020 3 ...

Page 9

... MRFG35010ANT1 9 ...

Page 10

... ZONE W É É É É É É É É 1 É É É É É É É É É É É É É É É É ZONE X VIEW MRFG35010ANT1 10 PACKAGE DIMENSIONS " 0.35 (0.89 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14 ...

Page 11

... Added Table 3, ESD Protection Characteristics renumbered subsequent tables 2 June 2009 • Modified data sheet to reflect MSL rating change from result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516 Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRFG35010ANT1 11 ...

Page 12

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRFG35010ANT1 Document Number: MRFG35010AN Rev. 2, 6/2009 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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