2N4416 Vishay, 2N4416 Datasheet - Page 3

• Manufacturer Part Number: 2N4416
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N4416

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -30V
• Drain-gate Voltage (max): -30V
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Breakdown Voltage Vbr: -30V
• Gate-source Cutoff Voltage Vgs(off) Max: -6V
• No. Of Pins: 4
• Continuous Drain Current Id: 15mA
• Gate-source Breakdown Voltage: -25V
• Mounting Type: Through Hole
• Lead Free Status / RoHS Status: Not Compliant

Notes
a.
b.
c.
d.
HIGH-FREQUENCY SPECIFICATIONS FOR 2N4416/2N4416A (T
Common Source Input Conductance
Common Source Input Susceptance
Common Source Output Conductance
Common Source Output Susceptance
Common Source Forward Transconductance
Common-Source Power Gain
Noise Figure
TYPICAL CHARACTERISTICS (T
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
This parameter not registered with JEDEC.
Not a production test.
20
16
12
10
8
4
0
8
6
4
2
0
0
0
d
Drain Current and Transconductance
V
g
V
fs
GS(off)
vs. Gate-Source Cutoff Voltage
−2
GS(off)
2
Parameter
V
Output Characteristics
DS
= −2 V
− Gate-Source Cutoff Voltage (V)
I
g
f = 1 kHz
− Drain-Source Voltage (V)
DSS
fs
@ V
d
−4
I
@ V
4
DSS
DS
DS
d
d
= 10 V, V
d
= 10 V, V
d
−6
6
d
GS
GS
= 0 V
V
= 0 V
GS
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
−1.2 V
−1.4 V
−8
8
= 0 V
A
Symbol
= 25_C UNLESS OTHERWISE NOTED)
g
b
G
g
b
NF
g
oss
oss
−10
iss
iss
fs
ps
10
10
8
6
4
2
0
V
Test Conditions
V
DS
DS
DS
= 15 V, V
= 15 V, I
500
400
300
200
100
15
12
0
9
6
3
0
0
0
D
GS
GS
On-Resistance and Output Conductance
= 5 mA
R
2N4416/2N4416A/SST4416
= 0 V
G
V
V
r
vs. Gate-Source Cutoff Voltage
= 1 kW
DS
GS(off)
−2
GS(off)
2
V
Output Characteristics
DS
− Gate-Source Cutoff Voltage (V)
= −3 V
A
− Drain-Source Voltage (V)
r
g
f = 1 kHz
DS
= 25_C UNLESS NOTED)
os
−4
@ VDS = 10 V, V
@
4
Min
18
I
D
100 MHz
= 300 mA,
g
Max
2,500
1,000
−6
100
os
6
75
2
Vishay Siliconix
Limits
V
GS
GS
V
= 0 V
= 0 V
GS
4,000
Min
−8
10
8
400 MHz
= 0 V
−0.3 V
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−1.8 V
10,000
Max
1,000
4,000
100
www.vishay.com
−10
4
10
100
80
60
40
20
0
Unit
mS
m
dB
dB
NH
3