NE856M02-T1-AZ California Eastern Labs, NE856M02-T1-AZ Datasheet

NE856M02-T1-AZ

Manufacturer Part Number

NE856M02-T1-AZ

Description

Manufacturer

California Eastern Labs

Datasheet

1.NE856M02-T1-AZ.pdf (8 pages)

Specifications of NE856M02-T1-AZ

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

12V

Collector-base Voltage(max)

20V

Emitter-base Voltage (max)

Collector Current (dc) (max)

100mA

Dc Current Gain (min)

Power Dissipation

1.2W

Frequency (max)

6.5GHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

Mini Mold

Lead Free Status / RoHS Status

Compliant

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FEATURES

• HIGH COLLECTOR CURRENT:

• NEW HIGH GAIN POWER MINI-MOLD PACKAGE

• HIGH OUTPUT POWER AT 1 dB COMPRESSION:

• HIGH IP

DESCRIPTION

ELECTRICAL CHARACTERISTICS

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor

designed for medium power applications requiring high dy-

namic range and low intermodulation distortion. This device

offers excellent performance and reliability at low cost through

NEC's titanium, platinum, gold metallization system and direct

nitride passivation of the surface of the chip. The NE856M02

is an excellent choice for low noise amplifiers in the VHF to UHF

band and is suitable for CATV and other telecommunication

applications.

SYMBOLS

100 mA MAX

22 dBm TYP at 1 GHz

32 dBm TYP at 1 GHz

(SOT-89 TYPE)

CBO

EBO

21E

FE 2

RE 3

Collector Cutoff Current at V

Emitter Cutoff Current at V

DC Current Gain at V

Gain Bandwidth Product at V

Feed-back Capacitance at V

Insertion Power Gain at V

Noise Figure 1 at V

Noise Figure 2 at V

PARAMETERS AND CONDITIONS

EIAJ

TRANSISTOR HIGH FREQUENCY

PACKAGE OUTLINE

REGISTERED NUMBER

PART NUMBER

LOW DISTORTION AMPLIFIER

= 10 V, I

= 1 V, I

= 10 V, I

= 7 mA, f = 1 GHz

= 40 mA, f = 1 GHz

= 20 mA

NPN EPITAXIAL SILICON

= 0

= 20 mA, f = 1 GHz

= 0

= 0, f = 1.0 MHz

= 20 mA

= 25°C)

UNITS

GHz

µA

OUTLINE DIMENSIONS

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

0.42

±0.06

California Eastern Laboratories

MIN

BOTTOM VIEW

PACKAGE OUTLINE M02

1.5

1.6±0.2

4.5±0.1

3.0

0.45

±0.06

NE856M02

2SC5336

M02

TYP

12.0

120

6.5

0.5

1.1

1.8

0.42

±0.06

(Units in mm)

NE856M02

1.5±0.1

0.25±0.02

MAX

250

1.0

0.8

3.0

Related parts for NE856M02-T1-AZ

NE856M02-T1-AZ Summary of contents

Page 1

... NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE856M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications ...

Page 2

... TH (J- 100 Ambient Temperature CURRENT GAIN vs. COLLECTOR CURRENT 200 100 0 Collector Current, Ic (mA) 1 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 20 NE856M02-T1- 3.0 mA 100 W 1.2 150 °C -65 to +150 ° 25°C) A 150 (° QUANTITY PACKAGING 1000 Tape & Reel FEED BACK CAPACITANCE vs. ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN BAND WIDTH PRODUCT vs. COLLECTOR CURRENT 0 0 GHz Collector Current, Ic (mA) NOISE FIGURE vs. COLLECTOR CURRENT ...

Page 4

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz GHz - 0.1 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.626 -67.5 0.200 0.535 -110.6 0.400 0.479 -149.7 0.600 0.465 -168.7 0.800 0.461 178.6 1.000 0.459 168.7 1.200 0.458 160.4 1.400 0.458 152.9 1.600 0.457 146 ...

Page 5

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz 3 GHz - 0.1 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.481 -88.5 0.200 0.434 -130.1 0.400 0.414 -162.4 0.600 0.411 -178.1 0.800 0.410 171.0 1.000 0.410 162.2 1.200 0.409 154.5 1.400 0.409 147.5 1 ...

Page 6

... NE856M02 TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz 3 GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.508 -78.9 0.200 0.425 -120.5 0.400 0.384 -156.2 0.600 0.376 -173.7 0.800 0.374 174.4 1.000 0.374 164.9 1.200 0.375 156.8 1.400 0.375 149.5 1.600 ...

Page 7

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS GHz 0.1 GHz - GHz - NE856M02 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.388 -113.0 0.200 0.380 -147.3 0.400 0.377 -172.1 0.600 0.378 175.4 0.800 0.379 166.1 1.000 0.380 158.2 1.200 0.381 151.2 1.400 0.382 144.7 1.600 0.381 138 ...

Page 8

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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