JANTX2N3585 MICROSEMI, JANTX2N3585 Datasheet
JANTX2N3585
Manufacturer Part Number
JANTX2N3585
Description
Manufacturer
MICROSEMI
Datasheet
1.JANTX2N3585.pdf
(2 pages)
Specifications of JANTX2N3585
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
300V
Collector-base Voltage(max)
500V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
2A
Dc Current Gain (min)
25
Power Dissipation
2.5W
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-66
Lead Free Status / RoHS Status
Not Compliant
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/384
Devices
2N3584
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1)
2)
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
I
I
V
V
V
V
C
C
Derate linearly @ 14.85 mW/
Derate linearly @ 200 mW/
CE
CE
CE
EB
= 10 mAdc
= 15 mAdc
= 150 Vdc
= 300 Vdc, V
= 400 Vdc, V
= 6.0 Vdc
Characteristics
BE
BE
Ratings
= 1.5 Vdc
= 1.5 Vdc
Characteristics
0
@ T
@ T
C for T
0
C for T
A
C
= +25
= +25
C
> +25
A
> +25
0
0
C
C
(2)
(1)
0
C
2N3585
C
2N3584, 2N3585 JAN SERIES
0
= 25
2N3584
2N3585
2N3584
2N3585
2N3584
2N3585
C
Symbol
Symbol
0
T
C unless otherwise noted)
V
V
V
V
R
J
,
P
CEO
CBO
CER
EBO
I
I
B
C
T
T
JC
stg
2N3584
250
375
300
-65 to +200
Max.
6.0
1.0
2.0
2.5
5.0
35
V
V
Symbol
2N3585
(BR)
(BR)
I
I
I
300
500
400
CEO
CEX
EBO
CEO
CER
TECHNICAL DATA
Units
0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
C/W
W
W
0
C
Min.
250
300
375
500
*See Appendix A for
Package Outline
TO-66* (TO-213AA)
Qualified Level
Max.
5.0
1.0
1.0
0.5
JANTXV
JANTX
JAN
Page 1 of 2
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
120101
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JANTX2N3585 Summary of contents
Page 1
NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/384 Devices 2N3584 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ +25 C Operating & ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 1.0 Adc Vdc 100 mAdc Vdc C CE Collector-Emitter Saturation Voltage I = 1.0 Adc 0.125 ...