NE58219-T1-A California Eastern Labs, NE58219-T1-A Datasheet
NE58219-T1-A
Specifications of NE58219-T1-A
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NE58219-T1-A Summary of contents
Page 1
... NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE58219 / 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. FEATURES • High f : 5.0 GHz TYP • ...
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... The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. h Classification FE Rank FB Marking 120 ° A MIN. TYP. MAX. I 0.1 CBO I 0.1 EBO 0.5 CE (sat 120 FE f 3.0 5 0.9 1 NE58219 / 2SC5004 UNIT TEST CONDITION μ μ 10 GHz MHz * ...
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... V – ° 200 Free Air 100 150 0.5 1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 0 0 GHz 0 – V NE58219 / 2SC5004 DC CURRENT GAIN vs. COLLECTOR CURRENT – Collector Current – – Collector Current – INSERTION POWER GAIN vs. COLLECTOR CURRENT – Collector Current – ...
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... MAXIMUM AVAILABLE GAIN, MAXIMUM AVAILABLE GAIN INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY 20 15 MAG 21e 0 0.1 0.2 0 – Frequency – GHz 4 5 MHz 2.0 1.0 0.5 2 0.2 0 NE58219 / 2SC5004 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE – Collector to Base Voltage – ...
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... NE58219 / 2SC5004 S 22 ANG ANG MAG –7.1 76.2 .987 –13.9 62.4 .956 –19.4 50.4 .906 40.2 .864 –23.7 30.8 .822 –27.7 22 ...
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... NE58219 / 2SC5004 S 22 ANG MAG ANG 68.1 .915 –17.9 52.7 .771 –29.5 44.8 .648 –35.5 39.1 .565 –38.1 35.1 .508 –40.2 32 ...
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... NE58219 / 2SC5004 S 22 ANG ANG MAG –15.4 70.8 .943 –27.0 53.8 .832 –34.6 42.7 .718 34.8 .635 –38.8 28.8 .571 –42.4 24 ...
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... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 8 NE58219 / 2SC5004 M4 94.11 ...