NE662M04-T2-A California Eastern Labs, NE662M04-T2-A Datasheet

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NE662M04-T2-A

Manufacturer Part Number
NE662M04-T2-A
Description
Manufacturer
California Eastern Labs
Datasheet

Specifications of NE662M04-T2-A

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
3.3V
Collector-base Voltage(max)
15V
Emitter-base Voltage (max)
1.5V
Collector Current (dc) (max)
35mA
Dc Current Gain (min)
50
Power Dissipation
115mW
Frequency (max)
25GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
4
Lead Free Status / RoHS Status
Compliant
• HIGH GAIN BANDWIDTH: f
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
FEATURES
DESCRIPTION
The NE662M04 is fabricated using NEC's UHS0 25 GHz f
wafer process. With a typical transition frequency of 25 GHz
the NE662M04 is usable in applications from 100 MHz to 10
GHz. The NE662M04 provides excellent low voltage/low cur-
rent performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE662M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
ELECTRICAL CHARACTERISTICS
Notes:
• SOT-343 footprint, with a height of just 0.59 mm
• Flat Lead Style for better RF performance
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG =
5. MSG =
SYMBOLS
|S
MAG
MSG
P
I
I
Cre
h
CBO
EBO
NF
IP
21E
f
1dB
FE
T
3
|
2
S
S
S
S
21
12
21
12
(
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain
Gain Bandwidth at V
Maximum Available Power Gain
Maximum Stable Gain
Insertion Power Gain at V
Noise Figure at V
Output Power at 1 dB compression point at
V
Third Order Intercept Point at V
Feedback Capacitance
K-
CE
(K
= 2 V, I
2
-1)
T
)
C
= 25 GHz
= 20 mA, f = 2 GHz
PARAMETERS AND CONDITIONS
EIAJ
CE
FREQUENCY TRANSISTOR
CE
= 2 V, I
2
1
PACKAGE OUTLINE
5
3
at V
REGISTERED NUMBER
= 3 V, I
at V
PART NUMBER
at V
CE
EB
CE
C
CE
CB
= 2 V, I
CB
= 5 mA, f = 2 GHz, Z
= 1 V, I
(T
= 2 V, I
C
= 2 V, I
= 5V, I
CE
= 2 V, I
4
A
= 30 mA, f = 2 GHz
at V
= 25°C)
= 2 V, I
C
C
CE
C
= 20 mA, f = 2 GHz
E
C
= 0
C
NPN SILICON HIGH
= 5 mA
= 0
= 20 mA, f = 2 GHz
= 2 V, I
= 0, f = 1 MHz
C
T
= 20 mA, f = 2 GHz
C
= 20 mA, f = 2 GHz
IN
= Z
M04
OPT
California Eastern Laboratories
UNITS
GHz
dBm
nA
nA
dB
dB
dB
dB
pF
MIN
50
20
14
NE662M04
NE662M04
2SC5508
M04
TYP
0.18
1.1
70
25
20
20
17
11
22
MAX
0.24
200
200
100
1.5

Related parts for NE662M04-T2-A

NE662M04-T2-A Summary of contents

Page 1

... DESCRIPTION The NE662M04 is fabricated using NEC's UHS0 25 GHz f wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low cur- rent performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications ...

Page 2

... NE662M04 ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T T Junction Temperature J T Storage Temperature STG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ...

Page 3

... 30 25.0 20.0 15.0 10.0 5.0 0.0 100 (mA) 30 25.0 20.0 15.0 10.0 5.0 0.0 100 NE662M04 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY 4 2V 4.0 3 3.0 2.5 2.0 1 Frequency, f (GHz) NOISE FIGURE AND ASSOCIATED GAIN vs. COLLECTOR CURRENT 6. 1.5 GHz 5.00 ...

Page 4

TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH vs. COLLECTOR CURRENT Collector Current TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 ...

Page 5

TYPICAL PERFORMANCE CURVES FORWARD INSERTION GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz) FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE ...

Page 6

... PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base ORDERING INFORMATION PART NUMBER QUANTITY NE662M04-T2 3000 3 0.65 1.30 0.65 4 +0.1 0.11 -0.08 PACKAGING Tape & Reel ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 GHz -j10 GHz -j25 -j50 NE662M04 FREQUENCY S 11 GHz MAG ANG 0.10 0.800 -6.49 0.20 0.823 -20.59 0.30 0.784 -33.50 0.40 0.756 -44.64 0.50 0.723 -54.00 0.70 0.673 -71.29 1.00 0.606 -94.50 1.50 0.525 -125.16 2 ...

Page 8

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 0.1 GHz GHz -j10 GHz -j25 -j50 NE662M04 FREQUENCY S 11 GHz MAG ANG 0.10 0.656 -12.55 0.50 0.558 -72.63 1.00 0.459 -117.32 1.50 0.411 -147.32 2.00 0.390 -170.12 2.50 0.380 169.60 3.00 0.384 151.78 3.50 ...

Page 9

... NE662M04 90˚ 120˚ 60˚ GHz 150˚ 30˚ 180˚ 12 0.1 GHz 0.1 GHz GHz -150˚ -30˚ -120˚ ...

Page 10

... NE662M04 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 1.6e-16 MJC BF 111 XCJC NF 1.02 CJS VAF 23 VJS IKF 0.38 MJS ISE 1e XTF NR 1.02 VTF VAR 2.5 ITF IKR 0.1 PTF ISC 3e- 1. 0.77 XTB RB 3.5 XTI RBM 20 KF IRB 1 ...

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