2N3716JANTX MICROSEMI, 2N3716JANTX Datasheet
2N3716JANTX
Manufacturer Part Number
2N3716JANTX
Description
Manufacturer
MICROSEMI
Datasheet
1.2N3716JANTX.pdf
(2 pages)
Specifications of 2N3716JANTX
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage(max)
100V
Emitter-base Voltage (max)
7V
Collector Current (dc) (max)
10A
Dc Current Gain (min)
50
Power Dissipation
5W
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-3
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N3716JANTX
Manufacturer:
Microsemi
Quantity:
1 400
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/408
Devices
2N3715
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1) Derate linearly 28.57 mW/
2) Derate linearly 0.857 W/
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Breakdown Current
Collector-Base Cutoff Current
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
I
V
V
V
V
V
C
CB
CB
EB
BE
BE
= 10 mAdc
= 7.0 Vdc
= 80 Vdc
= 100 Vdc
= 1.5 Vdc, V
= 1.5 Vdc, V
Characteristics
CE
CE
Ratings
= 60 Vdc
= 80 Vdc
0
Characteristics
C for T
0
C for T
@ T
@ T
C
A
C
A
>100
=100
= 25
>25
0
0
0
0
C
C
C
C
C
2N3716
2N3715
2N3716
2N3715
2N3716
2N3715
2N3716
= 25
0
C unless otherwise noted)
Symbol
Symbol
T
V
V
V
R
J
,
P
CEO
CBO
EBO
I
I
T
B
C
T
JC
stg
2N3715
60
80
-65 to +200
Max.
85.7
1.17
7.0
4.0
5.0
10
V
Symbol
2N3716
(BR)
I
I
I
CBO
EBO
CEX
100
80
CEO
TECHNICAL DATA
0
Units
Unit
Vdc
Vdc
Vdc
Adc
Adc
C/W
0
W
W
C
Min.
60
80
*See Appendix A for
Package Outline
TO-3* (TO-204AA)
Qualified Level
Max.
1.0
1.0
1.0
10
10
JANTXV
JANTX
JAN
Page 1 of 2
mAdc
mAdc
Unit
Vdc
120101
Adc
Related parts for 2N3716JANTX
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MICROSEMI DIODE
Manufacturer:
MICROSEMI
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
2N3716JANTX Summary of contents
Page 1
NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/408 Devices 2N3715 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics Collector-Emitter Cutoff Current Vdc Vdc CE (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 1.0 Adc 2.0 Vdc 3.0 Adc 2.0 ...