2N2920JANTX MICROSEMI, 2N2920JANTX Datasheet

2N2920JANTX

Manufacturer Part Number

2N2920JANTX

Description

Manufacturer

MICROSEMI

Datasheet

1.2N2920JANTX.pdf (1 pages)

Specifications of 2N2920JANTX

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

60V

Collector-base Voltage(max)

60V

Emitter-base Voltage (max)

Collector Current (dc) (max)

30mA

Dc Current Gain (min)

175

Power Dissipation

500mW

Frequency (max)

140MHz

Operating Temp Range

-55C to 125C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Package Type

TO-78

Lead Free Status / RoHS Status

Not Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N2920JANTX

Manufacturer:

HITTITE

Quantity:

1 400

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2N2920 (#18672)

NPN Dual Transistors

Division

Mil-Spec

Shipping

Absolute Maximum Ratings

Power Dissipation

Collector Current

Breakdown Voltage Collector-to-Base

Voltage Collector to Emitter Open

Voltage Emitter to Base Open

Electrical Characteristics

Bandwidth

DC Current Gain

http://download.siliconexpert.com/pdfs/transistor/mcs/2n2920.htm

http://download.siliconexpert.com/pdfs/transistor/mcs/2n2920.htm6/28/2005 10:38:29 AM

=25 ºC,300µs pulse)

Products

Watertown

(none)

Power Conditioning

Symbol

HFE

Datasheet

Qual Data

175

Min

Symbol

Power

V(CBO)

Typ

CEO

EBO

NPN Dual Transistors

Max

140 MHz

600

(none)

0.03 A

Max Unit

0.5 W

Unit

Package

TO-77(STD)

(800) 713-4113 (949) 221-7100

> 2N2920

RFQ/Sample

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