2N5339JANTX MICROSEMI, 2N5339JANTX Datasheet

2N5339JANTX

Manufacturer Part Number
2N5339JANTX
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of 2N5339JANTX

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage(max)
100V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
5A
Dc Current Gain (min)
60
Power Dissipation
1W
Operating Temp Range
-55C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-39
Lead Free Status / RoHS Status
Not Compliant
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
DEVICES
T4-LDS-0011 Rev. 3 (101764)
ABSOLUTE MAXIMUM RATINGS (T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Air
NOTES:
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
Collector-Emitter Cutoff Current
V
Collector-Emitter Cutoff Current
V
Collector-Base Cutoff Current
V
Emitter-Base Cutoff Current
V
C
CE
CE
CB
EB
1)
2) Derate linearly 100mW/°C for T
3) Derate linearly 434mW/°C for T
= 50mAdc
= 100Vdc
= 90Vdc, V
= 6.0Vdc
= 100Vdc
Derate linearly 5.71mW/°C for T
Parameters / Test Conditions
Parameters / Test Conditions
BE
= 1.5Vdc
2N5339
NPN POWER SILICON SWITCHING TRANSISTOR
@ T
@ T
@ T
C
C
A
2N5339U3
= +25°C
= +25°C
C
C
= +25°C
A
> 25°C
> 25°C – U3
> 25°C
C
= +25°C unless otherwise noted)
A
= +25°C, unless otherwise noted)
Qualified per MIL-PRF-19500/560
(2)
(3)
(1)
– U3
T
Symbol
Symbol
V
op
V
V
V
R
(BR)CEO
I
I
I
I
TECHNICAL DATA SHEET
P
CBO
I
I
CEO
CEX
EBO
CEO
CBO
EBO
, T
θJA
B
C
T
stg
Min.
100
-65 to +200
Value
17.5
100
100
175
6.0
1.0
5.0
1.0
75
Max.
100
100
1.0
1.0
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
°C/W
µAdc
µAdc
µAdc
µAdc
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
Vdc
°C
W
JANTXV
(TO-205AD)
(TO-276AA)
JANTX
LEVELS
JANS
JAN
TO-39
U-3
Page 1 of 4

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2N5339JANTX Summary of contents

Page 1

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR DEVICES 2N5339 ABSOLUTE MAXIMUM RATINGS (T Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current @ T Total Power Dissipation @ Operating & Storage Junction Temperature Range ...

Page 2

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com ELECTRICAL CHARACTERISTICS (T Parameters / Test Conditions (3) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.5Adc 2.0Vdc 2.0Adc 2.0Vdc 5.0Adc 2.0Vdc C CE Collector-Emitter Saturation Voltage I = 2.0Adc 0.2Adc 5.0Adc 0.5Adc C B Base-Emitter Saturation Voltage ...

Page 3

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. ...

Page 4

... Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 4. Terminal 1 - collector, terminal 2 -base, terminal 3 - emitter. FIGURE 2. Physical dimensions and configuration (U3) (SMD 5) (TO-276AA) T4-LDS-0011 Rev ...

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