FS10R12VT3 Infineon Technologies, FS10R12VT3 Datasheet - Page 2
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FS10R12VT3
Manufacturer Part Number
FS10R12VT3
Description
IGBT Modules N-CH 1.2KV 16A
Manufacturer
Infineon Technologies
Datasheet
1.FS10R12VT3.pdf
(8 pages)
Specifications of FS10R12VT3
Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
16 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EASY750
Ic (max)
10.0 A
Vce(sat) (typ)
1.9 V
Technology
IGBT3
Housing
EasyPACK 750
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FS10R12VT3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
8
1
1+
8
1
LS !
$
7
c
h
=
!
#
#
9
=
?D # =
9U
#
?D # =
$
$
!
!
9
#
9
9
=
2 a
2
8
#
!
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: ( 0 #
g ( 0 72 ,@. (
g ( 0 72 ,@. (
g ( 0 72
g ( 0 72
g ( 0 72
FS10R12VT3
1
1
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,
,
,
B
gB
gB
gB
( 6) 7BK
( 6) 7BK
( 6) 7BK
,
,
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2
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Vorläufige Daten
preliminary data
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#
0
HH2
026)
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062
062)
02
0
2
2H
26
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2Q
# C
20
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K+
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7
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