DF300R12KE3 Infineon Technologies, DF300R12KE3 Datasheet - Page 5

• Manufacturer Part Number: DF300R12KE3
• Description: IGBT Transistors 1200V 300A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF300R12KE3

• Configuration: Single
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 300 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1470 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 300.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
Durchlasskennlinie der Dioden (typisch)
forward caracteristic of diodes (typical)
Technische Information / technical information
600
525
450
375
300
225
150
600
500
400
300
200
100
75
0
0
0,0
5
0,2
DF300R12KE3
6
0,4
0,6
7
Tvj=25°C
Tvj=125°C
Tvj = 25°C
Tvj = 125°C
0,8
5 (8)
1,0
8
V
F
1,2
V
[V]
GE
9
[V]
1,4
1,6
10
1,8
I
V
I
C
F
CE
= f(V
= f(V
= 20V
11
2,0
F
GE
)
)
2,2
DB_DF300R12KE3_3.0
12
2,4
800
700
600
500
400
300
200
100
0
2002-10-02
13