IXGH 28N120BD1SN IXYS, IXGH 28N120BD1SN Datasheet - Page 5

IXGH 28N120BD1SN

Manufacturer Part Number
IXGH 28N120BD1SN
Description
Manufacturer
IXYS
Datasheet

Specifications of IXGH 28N120BD1SN

Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Compliant
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10000
1000
450
400
350
300
250
200
150
100
100
0.50
1.00
0.10
10
25
0
1
t
t
R
V
V
Sw itching Tim e on Tem perature
d(off)
fi
35
Fig. 13. Dependence of Turn-off
GE
CE
G
5
- - - - - -
f = 1 MHz
= 5Ω
= 15V
= 960V
45
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
I
C
15
V
65
I
= 14A
C
C E
= 56A
75
20
- Volts
I
C
= 56A
85
Fig. 17. Maxim um Transient Therm al Resistance
25
I
C
95
= 14A
30
I
C
C
C
C
105 115 125
oes
res
10
ies
= 28A
35
Pulse Width - milliseconds
40
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
10
V
I
I
T
R
dV/dT < 10V/ns
C
G
CE
J
Fig. 16. Reverse-Bias Safe
G
300
= 28A
= 1 0mA
= 125
= 5Ω
= 600V
20
100
Fig. 14. Gate Charge
Operating Area
º
Q
C
30
500
G
- nanoCoulombs
V
40
C E
700
50
- Volts
IXGH28N120BD1
IXGT28N120BD1
60
900
70
80
1100
90
1300
1000
100

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