APTML1002U60R020T3AG MICROSEMI, APTML1002U60R020T3AG Datasheet
APTML1002U60R020T3AG
Specifications of APTML1002U60R020T3AG
Related parts for APTML1002U60R020T3AG
APTML1002U60R020T3AG Summary of contents
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... Gate - Source Voltage GS R Drain - Source ON Resistance DSon P Maximum Power Dissipation D In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTML1002U60R020T3AG V = 1000V DSS R = 600mΩ typ @ Tj = 25°C DSon I = 20A @ Tc = 25°C D Application • ...
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... V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTML1002U60R020T3AG = 25°C unless otherwise specified j Test Conditions V = 1000V ; 25° 800V ; 125°C ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTML1002U60R020T3AG 17 12 www.microsemi.com 3 – ...