1SV214 Toshiba, 1SV214 Datasheet
1SV214
Manufacturer Part Number
1SV214
Description
Manufacturer
Toshiba
Datasheet
1.1SV214.pdf
(3 pages)
Specifications of 1SV214
Configuration
Single
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Operating Temperature (max)
125C
Lead Free Status / RoHS Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1SV214
Manufacturer:
TOSHIBA
Quantity:
6 000
Company:
Part Number:
1SV214
Manufacturer:
ROHM
Quantity:
2 845
Part Number:
1SV214
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
1SV214 (TPH3
Manufacturer:
TOHSIBA
Quantity:
2 579
Company:
Part Number:
1SV214 (TPH3)
Manufacturer:
TOHSIBA
Quantity:
2 395
Company:
Part Number:
1SV214 (TPH3F)
Manufacturer:
TOSHIBA
Quantity:
2 422
TV Tuning
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
High capacitance ratio: C2 V/C25 V = 6.5 (typ.)
Low series resistance: r
Excellent C-V characteristics, and small tracking error.
Useful for small size tuner.
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Note 1: Units are compounded in one package and are matched to 2.5%.
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
(V
C
Characteristics
Characteristics
R
(max)
= 2~25 V)
C
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
(min)
−
C
(min)
s
= 0.4 Ω (typ.)
< = 0.025
(Ta = 25°C)
C2 V/C25 V
(Ta = 25°C)
Symbol
Symbol
C25 V
C2 V
V
T
V
V
I
T
r
RM
stg
R
s
R
R
j
1SV214
35 (R
I
V
V
V
V
R
R
R
R
R
= 1 μA
−55~125
= 28 V
= 2 V, f = 1 MHz
= 25 V, f = 1 MHz
= 5 V, f = 470 MHz
Rating
L
125
30
= 10 kΩ)
1
Test Condition
⎯
Unit
°C
°C
V
V
Weight: 0.004 g (typ.)
JEDEC
JEITA
TOSHIBA
14.16
2.11
5.90
Min
30
⎯
⎯
Typ.
6.50
0.4
⎯
⎯
⎯
⎯
1-1E1A
2007-11-01
16.25
―
―
2.43
7.15
0.55
Max
10
⎯
1SV214
Unit: mm
Unit
nA
pF
pF
⎯
Ω
V
Related parts for 1SV214
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
1SV214 Summary of contents
Page 1
... MHz MHz C25 ⎯ C2 V/C25 470 MHz JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max ⎯ ⎯ 30 ⎯ ⎯ 10 ⎯ 14.16 16.25 ⎯ 2.11 2.43 5.90 6.50 7.15 ⎯ 0.4 0.55 2007-11-01 1SV214 Unit: mm Unit ⎯ Ω ...
Page 2
... C (Ta) C (25) δ = Note (25) 2 1SV214 × 100 (%) 2007-11-01 ...
Page 3
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 1SV214 2007-11-01 ...