1N5615JANTX MICROSEMI, 1N5615JANTX Datasheet

1N5615JANTX

Manufacturer Part Number

1N5615JANTX

Description

Manufacturer

MICROSEMI

Datasheet

1.1N5615JANTX.pdf (3 pages)

Specifications of 1N5615JANTX

Rectifier Type

Switching Diode

Configuration

Single

Peak Rep Rev Volt

200V

Avg. Forward Curr (max)

Rev Curr

0.5uA

Peak Non-repetitive Surge Current (max)

30A

Forward Voltage

1.6@3AV

Operating Temp Range

-55C to 125C

Package Type

Case A

Rev Recov Time

150ns

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Lead Free Status / RoHS Status

Not Compliant

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Download datasheet (176Kb)

1-15-2007 REV D

IMPORTANT: For the most current data, consult MICROSEMI’s website:

ELECTRICAL CHARACTERISTICS

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429

and is ideal for high-reliability applications where a failure cannot be tolerated.

These industry-recognized 1.0 Amp rated rectifiers for working peak reverse

voltages from 200 to 1000 volts are hermetically sealed with voidless-glass

construction using an internal “Category I” metallurgical bond. These devices are

also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including fast and ultrafast device

types in both through-hole and surface mount packages.

derate linearly at 7.5 mA/

1N5615

1N5617

1N5619

1N5621

1N5623

• Popular JEDEC registered 1N5615 to 1N5623 series

• Voidless hermetically sealed glass package

• Triple-Layer Passivation

• Internal “Category I” Metallurgical bonds

• Working Peak Reverse Voltage 200 to 1000 Volts.

• JAN, JANTX, JANTXV, and JANS available per MIL-

• Surface mount equivalents also available in a square

•

NOTE 1: From 1 Amp at T

resistance from mounting point to ambient is sufficiently controlled where T

NOTE 2: T

NOTE 3: I

TYPE

PRF-19500/429

end-cap MELF configuration with “US” suffix (see

separate data sheet for 1N5615US thru 1N5623US)

Junction & Storage Temperature: -65

Thermal Resistance: 38

inch (10 mm) lead length from body

Thermal Impedance: 4.5

Average Rectified Forward Current (I

Forward Surge Current: 30 Amps @ 8.3 ms half-sine

Solder Temperatures: 260ºC for 10 s (maximum)

= 55ºC

WORKING

REVERSE

VOLTAGE

VOLTS

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

= 0.5 A, I

PEAK

1000

= 100

200

400

600

800

MAXIMUM RATINGS

RWM

S C O T T S D A L E D I V I S I O N

C, f = 60 Hz, I

FEATURES

BREAKDOWN

= 1 A, I

C to 0 Amps at T

VOLTAGE

MINIMUM

VOLTS

1100

220

440

660

880

@ 50μA

= 55

C/W junction to lead at 3/8

C/W @ 10 ms heating time

DESCRIPTION

R(REC)

C, derate linearly at 5.56 mA/

= 750 mA for ten 8.3 ms surges @ 1 minute intervals

= 0.250 A

1.00

RECTIFIED

AVERAGE

CURRENT

): 1.0 Amps @

(NOTE 1)

C to +175

AMPS

= 200

@ T

100

.750

Scottsdale Division

Microsemi

C. These ambient ratings are for PC boards where thermal

VOLTAGE

FORWAR

VOLTS

.8 MIN.

(MAX.)

MAX.

1.6

@ 3A

FAST RECOVERY GLASS RECTIFIERS

http://www.microsemi.com

VOIDLESS-HERMETICALLY SEALED

C to 0.75 Amp at T

•

CURRENT

REVERSE

Fast recovery 1 Amp rectifiers 200 to 1000 V

Military and other high-reliability applications

General rectifier applications including bridges, half-

bridges, catch diodes, etc.

High forward surge current capability

Extremely robust construction

Low thermal resistance

Controlled avalanche with peak reverse power

capability

Inherently radiation hard

MicroNote 050

CASE: Hermetically sealed voidless hard glass with

Tungsten slugs (package dimensions on last page)

TERMINATIONS: Axial leads are copper with

had solid Silver axial-leads and no finish.

MARKING: Body paint and part number, etc.

POLARITY: Cathode band

TAPE & REEL option: Standard per EIA-296

WEIGHT: 340 mg

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

(MAX.)

@ V

MECHANICAL AND PACKAGING

μA

RWM

100

APPLICATIONS / BENEFITS

1N5615 thru 1N5623

J(max)

does not exceed 175

CAPACITANCE

C @ V

= 100

(MAX.)

f=1 MHz

C. From T

12 V

as described in Microsemi

APPEARANCE

MAXIMUM

CURRENT

(NOTE 2)

SURGE

AMPS

FSM

= 100

“A” Package

RECOVERY

REVERSE

(NOTE 3)

(MAX.)

150

250

300

500

Page 1

Related parts for 1N5615JANTX

1N5615JANTX Summary of contents

Page 1

... I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages ...

Page 2

... Copyright © 2007 1-15-2007 REV D 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SYMBOLS & DEFINITIONS Definition GRAPHS FIGURE 2 TYPICAL REVERSE CURRENT vs PIV Microsemi Scottsdale Division Page 2 ...

Page 3

... Copyright © 2007 1-15-2007 REV D 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS FIGURE 4 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT PACKAGE DIMENSIONS Dimensions: Inches/[mm] Microsemi Scottsdale Division Page 3 ...

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