RS1J-13-F Diodes Zetex, RS1J-13-F Datasheet - Page 2

• Manufacturer Part Number: RS1J-13-F
• Manufacturer: Diodes Zetex

Specifications of RS1J-13-F

• Rectifier Type: Switching Diode
• Configuration: Single
• Peak Rep Rev Volt: 600V
• Avg. Forward Curr (max): 1
• Rev Curr: 5uA
• Peak Non-repetitive Surge Current (max): 30A
• Forward Voltage: 1.3V
• Operating Temp Range: -65C to 150C
• Package Type: SMA
• Rev Recov Time: 250ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Compliant

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 4)
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Typical Thermal Resistance, Junction to Terminal (Note 5)
Operating and Storage Temperature Range
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage (Note 4)
Reverse Recovery Time (Note 6)
Typical Total Capacitance (Note 7)
Notes:
RS1A/B - RS1M/B
Document number: DS15002 Rev. 13 - 2
1.2
1.0
0.8
0.6
0.2
0.4
4. Short duration pulse test used to minimize self-heating effect.
5. Valid provided that terminals are kept at ambient temperature.
6. Reverse recovery test conditions: I
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
0
25
Fig. 1 Forward Current Derating Curve
50
T , TERMINAL TEMPERATURE ( C)
T
Characteristic
Characteristic
Characteristic
@T
75
A
= 25°C unless otherwise specified
100
@T
F
= 0.5A, I
125
A
= 25°C unless otherwise specified
@ T
@ T
R
@ T
= 1.0A, I
@ I
150
°
T
A
A
= 120°C
F
= 125°C
= 25°C
= 1.0A
rr
175
= 0.25A. See figure 5.
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Symbol
Symbol
V
V
V
R(RMS)
I
2 of 4
V
I
FSM
RWM
V
C
RRM
I
RM
t
FM
O
rr
R
T
Symbol
T
J,
R
T
θ JT
A/AB
A/AB
RS1
RS1
STG
50
35
0.01
1.0
0.1
10
0
B/BB
B/BB
RS1
RS1
V , INSTANTANEOUS FORWARD VOLTAGE (V)
100
70
F
150
Fig. 2 Typical Forward Characteristics
D/DB
D/DB
RS1
RS1
200
140
0.4
-65 to +150
Value
G/GB
20
G/GB
RS1
RS1
400
280
200
1.0
1.3
5.0
30
15
0.8
J/JB
J/JB
RS1
RS1
600
420
250
RS1A/B - RS1M/B
1.2
K/KB
K/KB
RS1
RS1
800
560
T = 25 C
J
500
o
© Diodes Incorporated
September 2010
°C/W
Unit
M/MB
M/MB
1000
RS1
°C
RS1
1.6
700
Unit
Unit
µA
ns
pF
V
V
A
A
V