S1A-13-F Diodes Zetex, S1A-13-F Datasheet - Page 2

• Manufacturer Part Number: S1A-13-F
• Manufacturer: Diodes Zetex

Specifications of S1A-13-F

• Rectifier Type: Switching Diode
• Configuration: Single
• Peak Rep Rev Volt: 50V
• Avg. Forward Curr (max): 1
• Rev Curr: 5uA
• Peak Non-repetitive Surge Current (max): 30A
• Forward Voltage: 1.1V
• Operating Temp Range: -65C to 150C
• Package Type: SMA
• Rev Recov Time: 3000ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Compliant

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Typical Thermal Resistance, Junction to Terminal (Note 4)
Operating and Storage Temperature Range
Forward Voltage
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 5)
Typical Total Capacitance
8.3ms Single half sine-wave superimposed on rated load
Notes:
S1A/B - S1M/B
Document number: DS16003 Rev. 20 - 2
1.0
0.8
0.6
0.4
0.2
4. Thermal resistance junction to terminal, unit mounted on PC board with 5.0 mm
5. Measured with I
6. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
0
40
Resistive or
inductive load
Fig. 1 Forward Current Derating Curve
60
T , TERMINAL TEMPERATURE ( C)
T
Characteristic
Characteristic
Characteristic
F
80
= 0.5A, I
@T
(Note 6)
A
100
= 25°C unless otherwise specified
R
= 1.0A, I
120
@T
RR
A
= 0.25A.
= 25°C unless otherwise specified
140
@ T
@ T
@ T
@ I
°
F
T
A
A
160
= 1.0A
= 100°C
= 25°C
= 125°C
180
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Symbol
V
Symbol
V
V
R(RMS)
I
2 of 4
FSM
RWM
V
RRM
I
V
I
O
C
RM
t
R
FM
rr
T
Symbol
T
J,
R
T
θ JT
A/AB
STG
S1
50
35
2
0.01
1.0
0.1
(0.013 mm thick) copper pads as heat sink.
10
0
Min
V , INSTANTANEOUS FORWARD VOLTAGE (V)
B/BB
-
-
-
-
-
F
100
S1
70
Fig. 2 Typical Forward Characteristics
0.4
D/DB
200
140
S1
-65 to +150
Value
Typ
1.8
10
G/GB
30
-
-
-
400
280
1.0
S1
30
0.8
J/JB
600
420
S1
1.2
S1A/B - S1M/B
Max
100
1.1
5.0
3.0
K/KB
-
800
560
S1
© Diodes Incorporated
September 2010
°C/W
1.6
Unit
M/MB
1000
°C
700
S1
Unit
μA
pF
μs
V
Unit
V
V
A
A