BAP65-03.115 NXP Semiconductors, BAP65-03.115 Datasheet - Page 4

• Manufacturer Part Number: BAP65-03.115
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-03.115

• Configuration: Single
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Power Dissipation: 500mW
• Operating Temperature Classification: Military
• Reverse Voltage: 30V
• Package Type: SOD-323
• Mounting: Surface Mount
• Maximum Series Resistance @ Minimum If: 0.95@5mAOhm
• Maximum Series Resistance @ Maximum If: 0.9@10mAOhm
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Lead Free Status / RoHS Status: Compliant

NXP Semiconductors
GRAPHICAL DATA
2004 Feb 11
handbook, halfpage
handbook, halfpage
Silicon PIN diode
T
Fig.2
(1) I
(2) I
(3) I
Diode inserted in series with a 50  stripline circuit and biased
via the analyzer Tee network; T
Fig.4
s 21
j
(
= 25 C; f = 100 MHz.
dB
−0.1
−0.2
−0.3
−0.4
−0.5
10
(Ω)
r D
)
F
F
F
10
2
−1
0
10
1
= 0.5 mA.
= 1 mA.
= 5 mA.
0
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (s
function of frequency; typical values.
(1)
(4) I
(5) I
1000
1
(2)
F
F
= 10 mA.
= 100 mA.
(3)
amb
21

2
= 25 C.
) of the diode as a
(4)
(5)
2000
10
I F (mA)
f (MHz)
MLD505
MLD503
3000
10
2
4
handbook, halfpage
handbook, halfpage
T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
j
amb
s 21
= 25 C; f = 1 MHz.
1000
(
dB
(fF)
−10
−20
−30
−40
C d
800
600
400
200
= 25 C.
)
0
0
2
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
frequency; typical values.
4
1000
21

2
8
) of the diode as a function of
12
2000
Product specification
f (MHz)
BAP65-03
16
V R (V)
MLD506
MLD504
3000
20