BAP50-04W T/R NXP Semiconductors, BAP50-04W T/R Datasheet - Page 3
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BAP50-04W T/R
Manufacturer Part Number
BAP50-04W T/R
Description
PIN Diodes TAPE-7 DIO-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BAP50-04W115.pdf
(8 pages)
Specifications of BAP50-04W T/R
Configuration
Dual Series
Reverse Voltage
50V
Maximum Series Resistance @ Maximum If
5@10mAOhm
Maximum Series Resistance @ Minimum If
40@0.5mAOhm
Power Dissipation
240mW
Forward Current
50mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
SC-70
Mounting
Surface Mount
Typical Carrier Life Time
1.05us
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Forward Continuous Current
50 mA
Carrier Life
1.05 us
Forward Voltage Drop
1.1 V
Maximum Diode Capacitance
0.5 pF at 5 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Lead Free Status / RoHS Status
Compliant
Other names
BAP50-04W,115
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Jan 29
Per diode
V
V
I
C
r
L
R
SYMBOL
SYMBOL
j
R
D
L
S
= 25 C unless otherwise specified.
F
R
General purpose PIN diode
d
th j-s
forward voltage
reverse voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
I
I
V
V
V
when switched from I
I
V
I
I
I
R
F
R
F
F
F
F
R
R
R
R
L
PARAMETER
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz
= 10 A
= 100 ; measured at I
= 50 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
CONDITIONS
3
F
= 10 mA to I
R
= 3 mA
R
= 6 mA;
50
MIN.
VALUE
250
0.95
0.45
0.35
0.30
25
14
3
1.05
1.60
TYP.
BAP50-04W
Product specification
1.1
100
0.6
0.5
40
25
5
MAX.
UNIT
K/W
V
V
nA
pF
pF
pF
s
nH
UNIT