1N5767 MICROSEMI, 1N5767 Datasheet - Page 2

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1N5767

Manufacturer Part Number
1N5767
Description
Manufacturer
MICROSEMI
Type
Attenuator/Switchr
Datasheet

Specifications of 1N5767

Configuration
Single
Operating Temperature Classification
Military
Reverse Voltage
100V
Mounting
Through Hole
Operating Temperature (min)
-65C
Pin Count
2
Applications Frequency Range
MF
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5767
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Copyright  2005
Rev. 0, 2006-01-17
Parameter
Total Capacitance (Max)
Series Resistance
Series Resistance
Series Resistance
Carrier Lifetime
Reverse Current
Current for Rs = 75Ω
Return Loss
Second Order Distortion
Third Order Distortion
20000
10000
1000
100
10
1
10
-3
Symbol
C
R
R
R
I
I
τ
75
-
-
-
R
T
S
S
S
10
-2
1N5767 (3080)
Conditions
V
If = 10 µA, F= 100 MHz
If = 20 mA, F = 100 MHz
If = 100 mA, f = 100 MHz
I
V
Rs = 75Ω
Diode terminates 75Ω line
Bridged tee attenuator
Attenuation = 10 dB
Pin = 50 dBmv
F1 = 10 MHz
F2 = 13 MHz
F
Microsemi
R
R
= 10 mA
=100V, F= 1 MHz
= Voltage rating
10
-1
Rs versus If
f = 100 MHz
TYPICAL
If (mA)
1N5957
1N5767 (5082-3080) SERIES
10
0
1N5957SERIES
1000Ω(min)
2000Ω(typ)
2.5Ω(max)
10
1.5Ω(typ)
1N5767
8Ω(max)
1.0(min)
10(max)
-40(typ)
-60(typ)
4Ω(typ)
30(typ)
1
0.4
0.7
10
2
1500Ω(min)
3000Ω(typ)
3.5Ω(max)
2.0Ω(typ)
1N5957
8Ω(max)
0.8 – 1.2
1.5(min)
10(max)
2.0(typ)
-50(typ)
-65(typ)
6Ω(typ)
30(typ)
0.4
Units
Ohms
Ohms
Ohms
mA
µA
dB
dB
dB
pF
µs
Page 2

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