Q65110A1832 OSRAM Opto Semiconductors Inc, Q65110A1832 Datasheet - Page 9

• Manufacturer Part Number: Q65110A1832
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: QW-LDr

Specifications of Q65110A1832

• Peak Wavelength: 811nm
• Beam Divergence Parallel: 12°
• Beam Divergence Perpendicular: 70°
• Laser Reverse Voltage (max): 3V
• Operating Temperature Classification: Commercial
• Threshold Current (max): 700mA
• Operating Current: 2.6A
• Power Supply Requirement: Single
• Operating Supply Voltage (typ): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 2.1V
• Operating Temp Range: -10C to 60C
• Pin Count: 2
• Lead Free Status / RoHS Status: Compliant

High-Power Laser Diodes | Leistungslaserdioden For more detailed product information and Technical Datasheets, please visit
High-Power Laser Diodes | Leistungslaserdioden For more detailed product information and Technical Datasheets, please visit
For more detailed product information and Technical Datasheets, please visit http://catalog.osram-os.com
Package
Gehäuse
Unmounted laser bars | Unmontierte Laserbarren
Package
Gehäuse
Pulsed laser dies | Impuls-Laserdioden Chips
High-Power Laser Diodes | Leistungslaserdioden
Type
Bezeichnung
SPL BG81-9S
SPL BK91-12S (911+/-
3nm)
SPL BK94-12S (934+/-
3nm)
SPL BK98-12S (972+/-
3nm)
SPL BK81-20H
SPL BK91-20HT
SPL BK94-20HT
SPL BK98-20HT
SPL BK81-12S (802+/-
3nm)
SPL BX81-2S
SPL BX94-2S
SPL BX98-2S
SPL BS81-6
SPL BS81-9S
SPL BS94-2S
Type
Bezeichnung
SPL DL90_3
http://catalog.osram-os.com
http://catalog.osram-os.com
Package
Outline
unmounted
laser bar
unmounted
laser bar
unmounted
laser bar
Package
Outline
unmounted
laser chip
typ
[nm]
808
915
940
980
808
915
940
980
808
808
940
980
808
940
typ
[nm]
905
peak
peak
P
typ
[W]
50
60
100
120
60
40
100
150
200
Opt.
peak
power
P
[W]
75
opt
opt
Beam
diver-
gence
full
angle
(1/e
[°]
65° x 9°
65° x 9°
70° x 12°
65° x 9°
Beam
diver-
gence
(FWHM)
[°]
25° x 11°
⊥
⊥
x
2
x
)
II
II
Package Features
50% filling factor,
25 emitters,
emitter width 200 µm,
emitter pitch 400 µm
30% filling factor,
19 emitters,
emitter width 150 µm,
emitter pitch 500 µm
82.5% filling factor,
75 emitters,
emitter width 110 µm,
emitter pitch 130 µm
for qcw applications
Package Features
emitter width 200 µm
Chip size
[mm x mm]
10 x 0.9
10 x 1.2
10 x 2
10 x 1.2
9.5 x 1.2
10 x 0.6
10 x 0.9
10 x 1.2
Chip size
[mm x mm]
0.6 x 0.6
Ordering Code
Bestellnummer
Q62702P5503
Q65110A8801
Q65110A8820
Q65110A8878
Q65110A8725
Q65110A8594
Q65110A8595
Q65110A8596
Q65110A8104
Q62702P5510
Q62702P5512
Q65110A0740
Q62702P1719
Q65110A2676
Q65110A6958
Ordering Code
Bestellnummer
Q65110A2591
Package Fig.
Bauteilzeich-
nung
Package Fig.
Bauteilzeich-
nung
185