5962-89841063A QP SEMICONDUCTOR, 5962-89841063A Datasheet - Page 18
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5962-89841063A
Manufacturer Part Number
5962-89841063A
Description
Manufacturer
QP SEMICONDUCTOR
Datasheet
1.5962-89841063A.pdf
(23 pages)
Specifications of 5962-89841063A
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DEFENSE SUPPLY CENTER COLUMBUS
DSCC FORM 2234
APR 97
4.3.2 Group C inspection. Group C inspection shall be in accordance with table III of method 5005 of MIL-STD-883
and as follows:
number and frequency of testing shall be the same as that required for group C inspection. Extended data retention
shall also consist of the following:
A
T = Temperature in Kelvin (i.e., °C + 273 = K).
t
t
K = Boltzmanns constant = 8.62 x 10-5 eV/°K using an apparent activation
The maximum bake temperature shall not exceed +200°C.
4.3.3 Group D inspection. Group D inspection shall be in accordance with table IV of method 5005 of MIL-STD-883.
End-point electrical parameters shall be as specified in table II herein.
4.4 Programming procedures. The programming procedures shall be as specified by the device manufacturer and
shall be made available to the user on request.
4.5 Erasing procedures. The erasing procedures shall be as specified by the device manufacturer and shall be made
available to the user on request.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535, appendix
A.
1
2
COLUMBUS, OHIO 43218-3990
F
= Time (hrs) at temperature T
= Time (hrs) at temperature T
= Acceleration factor (unitless quantity) = t
a. End-point electrical parameters shall be as specified in table II herein.
b. Steady-state life test conditions, method 1005 of MIL-STD-883.
c. An extended data retention test shall be added. A new sample shall be selected, and the sample size, accept
MICROCIRCUIT DRAWING
(1)
(2)
(3)
(4)
(1)
(2)
(3)
energy (EA) of 0.6 eV.
Test condition D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified
in method 1005 of MIL-STD-883.
TA = +125°C, minimum.
Test duration: 1,000 hours except as permitted by method 1005 of MIL-STD-883.
All devices shall be programmed with a pattern that assures all inputs and I/O's are dynamically switched.
All devices shall have a minimum of 50 percent of the logic array programmed with a charge on all cells, such
that the cell will not be in a neutral state.
Unbiased bake for 1,000 hours (minimum) at +150°C (minimum). The unbiased bake time may be accelerated
by using a higher temperature in accordance with the Arrhenius Relationship:
Read the pattern after bake and perform end-point electrical tests in accordance with table II herein for group C.
STANDARD
1
2
.
.
1
/t
2
.
SIZE
A
REVISION LEVEL
L
SHEET
5962-89841
18