BTS 3160D Infineon Technologies, BTS 3160D Datasheet - Page 3

• Manufacturer Part Number: BTS 3160D
• Manufacturer: Infineon Technologies

Specifications of BTS 3160D

• Switch Type: Low Side
• Power Switch Family: BTS3160D
• Input Voltage: -0.3 to 5.3V
• Power Switch On Resistance: 8mOhm
• Output Current: 7.8A
• Number Of Outputs: Single
• Mounting: Surface Mount
• Supply Current: 1.6mA
• Package Type: TO-252
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 4 +Tab
• Packages: PG-TO252-5
• Channels: 1.0
• Vds (max): 40.0 V
• Id(nom): 7.8 A
• Rds (on) (max): 10.0 mOhm
• Id(lim) (min): 70.0 A
• Lead Free Status / RoHS Status: Compliant

Smart Low Side Power Switch
HITFET - BTS3160D
1
The BTS3160D is a one channel low-side power switch in
PG-TO-252-5-13 package providing embedded protective functions.
The power transistor is realized by a N-channel vertical power
MOSFET.
The device is controlled by a chip in Smart Power Technology.
Features
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Table 1
Type
BTS3160D
Datasheet
Drain voltage
Supply voltage
On-State resistance at 25°C
Nominal load current
Maximum inrush current
Leakage current MOSFET at V
Supply current in off mode at V
Clamping Energy
Logic level input compatible to 3.3 V or 5V micro controllers
Supply by V
Very low over all leakage current
Providing digital fault information
Electrostatic discharge protection (ESD)
Green Product (RoHS compliant)
AEC Qualified
Overview
Basic Electrical Data
bb
line, down to 6 V
bb
bb
= 13.5 V, T
= 13.5 V, T
J
J
= 85 °C
= 85 °C
3
Package
PG-TO-252-5-13
V
V
R
I
I
I
I
E
Dnom
DSC
DSS
SSS
D
S
DS(ON,max)
AS
40 V
6.0 … 45 V
10 mΩ
7.8 A
70 A
2 µA
4 µA
0.3 J
PG-TO-252-5-13
Rev. 1.1, 2008-02-28
BTS3160D