EESX1137 Omron, EESX1137 Datasheet - Page 2
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EESX1137
Manufacturer Part Number
EESX1137
Description
Manufacturer
Omron
Type
Transmissiver
Datasheet
1.EESX1137.pdf
(4 pages)
Specifications of EESX1137
Number Of Elements
1
Output Device
Phototransistor
Gap Width
5mm
Slit Width
0.5mm
Reverse Breakdown Voltage
4V
Collector-emitter Voltage
30V
Forward Current
50mA
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
4000ns
Rise Time
4000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
■ Engineering Data
152
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Response Time Measurement
Circuit
Collector−Emitter voltage V
Output
Input
Input
Ambient temperature Ta (°C)
Load resistance R
Photomicrosensor (Transmissive)
90 %
10 %
I
I
I
I
I
F
F
F
F
F
= 50 mA
= 40 mA
= 30 mA
= 20 mA
= 10 mA
Ta = 25°C
L
V
Ta = 25°C
(kΩ)
CC
CE
= 5 V
(V)
Output
Relative Light Current vs.
Ambient Temperature Character-
istics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Sensing Position Characteristics
(Typical)
EE-SX1137
Ambient temperature Ta (°C)
Forward voltage V
Distance d (mm)
Ta = −30°C
Ta = 25°C
Ta = 70°C
(Center of
optical axis)
I
V
Ta = 25 ° C
F
CE
= 20 mA
F
I
V
F
CE
= 20 mA
(V)
= 10 V
= 5 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
120
100
80
60
40
20
0
−2.0
Sensing Position Characteristics
(Typical)
Ambient temperature Ta (°C)
V
0 lx
−1.5
CE
= 10 V
Forward current I
−1.0
Distance d (mm)
−0.5
0
d
0.5
I
V
Ta = 25 ° C
F
CE
F
= 20 mA
1.0
Ta = 25°C
V
(mA)
= 10 V
CE
= 10 V
1.5
2.0