EESX1137 Omron, EESX1137 Datasheet - Page 2

• Manufacturer Part Number: EESX1137
• Manufacturer: Omron
• Type: Transmissiver

Specifications of EESX1137

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 4V
• Collector-emitter Voltage: 30V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 4000ns
• Rise Time: 4000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

■ Engineering Data
152
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Response Time Measurement
Circuit
Collector−Emitter voltage V
Output
Input
Input
Ambient temperature Ta (°C)
Load resistance R
Photomicrosensor (Transmissive)
90 %
10 %
I
I
I
I
I
F
F
F
F
F
= 50 mA
= 40 mA
= 30 mA
= 20 mA
= 10 mA
Ta = 25°C
L
V
Ta = 25°C
(kΩ)
CC
CE
= 5 V
(V)
Output
Relative Light Current vs.
Ambient Temperature Character-
istics (Typical)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Sensing Position Characteristics
(Typical)
EE-SX1137
Ambient temperature Ta (°C)
Forward voltage V
Distance d (mm)
Ta = −30°C
Ta = 25°C
Ta = 70°C
(Center of
optical axis)
I
V
Ta = 25 ° C
F
CE
= 20 mA
F
I
V
F
CE
= 20 mA
(V)
= 10 V
= 5 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
120
100
80
60
40
20
0
−2.0
Sensing Position Characteristics
(Typical)
Ambient temperature Ta (°C)
V
0 lx
−1.5
CE
= 10 V
Forward current I
−1.0
Distance d (mm)
−0.5
0
d
0.5
I
V
Ta = 25 ° C
F
CE
F
= 20 mA
1.0
Ta = 25°C
V
(mA)
= 10 V
CE
= 10 V
1.5
2.0