OPB712 Optek Technology (TT electronics), OPB712 Datasheet
OPB712
Specifications of OPB712
Related parts for OPB712
OPB712 Summary of contents
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... Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on parallel axes in a black opaque plastic housing. The OPB712 consists of an infrared emitting diode and an NPN silicon photodarlington, mounted “side-by-side” on parallel axes in a black plastic housing. ...
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... Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] Input Diode (See OP268 for additional information—for reference only) Forward DC Current Peak Forward Current (1 μs pulse width, 300 pps) Reverse DC Voltage (2) Power Dissipation Output Phototransistor (OPB711), Output Photodarlington (OPB712) Collector-Emitter Voltage OPB711 OPB712 Emitter-Collector Voltage Collector DC Current OPB711 OPB712 ...
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... OPB712 Notes: (1) On OPB711 the distance from the assembly measurement surface to the reflective surface. On OPB712 the distance from the assembly face to the reflective surface. (2) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #E 152 7795. ...
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... OPB712 - Output vs Distance Normalized at 0.080" Kodak 90% Kodak 90% Kodak 18% Copier Paper Avery Label Retro Reflective 0.05 0.10 0.15 0.20 0.25 0.30 Distance to Reflective Surface (inches) OPB712 - Normalized Collector Current vs Forward Current vs Temperature Normalized Collector Current at 20mA and 20°C Reflective Surface Kodak 90% at distance 0.080" Forward Current (mA) FAX: (972) 323-2396 sensors@optekinc ...