EESX1025 Omron, EESX1025 Datasheet - Page 2
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EESX1025
Manufacturer Part Number
EESX1025
Description
Manufacturer
Omron
Type
Transmissiver
Datasheet
1.EESX1025.pdf
(4 pages)
Specifications of EESX1025
Number Of Elements
1
Output Device
Phototransistor
Gap Width
2.8mm
Reverse Breakdown Voltage
4V
Collector-emitter Voltage
30V
Forward Current
50mA
Collector Current (dc) (max)
20mA
Power Dissipation
100mW
Fall Time
4000ns
Rise Time
4000ns
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
■ Engineering Data
164
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Response Time Measurement
Circuit
Output
Collector−Emitter voltage V
Input
Input
Ta = 25°C
Ambient temperature Ta (°C)
Photomicrosensor (Transmissive)
I
P
Load resistance R
F
C
90 %
10 %
I
I
I
I
I
F
F
F
F
F
= 50 mA
= 40 mA
= 30 mA
= 20 mA
= 10 mA
L
V
Ta = 25°C
(kΩ)
CC
CE
= 5 V
Output
(V)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Sensing Position Characteristics
(Typical)
Relative Light Current vs.
Ambient Temperature Character-
istics (Typical)
EE-SX198
Ambient temperature Ta (°C)
Forward voltage V
Distance d (mm)
Ta = −30°C
Ta = 25°C
Ta = 70°C
(Center of
optical axis)
F
I
V
Ta = 25 ° C
I
V
F
F
(V)
CE
CE
= 20 mA
= 20 mA
= 10 V
= 5 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
100
120
Sensing Position Characteristics
(Typical)
80
60
40
20
0
−2.0
Ambient temperature Ta (°C)
−1.5
V
0 lx
CE
Forward current I
= 10 V
−1.0
Distance d (mm)
−0.5
0
d
0.5
Ta = 25°C
V
CE
I
V
Ta = 25 ° C
F
CE
= 20 mA
F
1.0
= 10 V
= 10 V
(mA)
1.5
2.0