GP2S60 Sharp Electronics, GP2S60 Datasheet - Page 3

• Manufacturer Part Number: GP2S60
• Manufacturer: Sharp Electronics
• Type: Reflectiver

Specifications of GP2S60

• Number Of Elements: 1
• Output Device: Phototransistor
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: SMT
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 100000ns
• Rise Time: 100000ns
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

∗
∗
■ Absolute Maximum Ratings
∗
■ Electro-optical Characteristics
2 The condition and arrangement of the refl ective object are shown below.
3 Without refl ective object.
1 For 5s or less
Output
Output
Transfer
∗ 1
teristics
charac-
Input
Input
The rank splitting of collector current (I
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
● Test Condition and Arrangement for Collector Current
Rank
A
B
∗ 2
∗ 3
Aluminum evaporation
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Forward voltage
Reverse current
Collector dark current
Response time
Collector Current
Leak current
Collector current, I
(I
F
Parameter
= 4mA, V
65 to 130
Parameter
40 to 80
CE
= 2V)
C
[ μ A]
d=1mm
glass plate
C
Rise time
Fall time
) shall be executed according to the table below.
Symbol
V
V
T
P
T
T
V
P
P
I
I
CEO
ECO
opr
stg
sol
C
tot
F
D
C
R
Symbol
I
I
LEAK
V
CEO
I
I
t
t
R
C
r
f
− 40 to + 100
F
− 25 to + 85
Rating
100
260
50
75
35
20
75
6
6
(T
3
V
a
I
I
R
= 25˚C)
Unit
mW
mW
mW
CE
mA
mA
F
F
˚C
˚C
˚C
V
V
V
= 4mA, V
= 4mA, V
L
= 2V, I
= 1k Ω , d = 1mm
Condition
V
I
F
V
CE
= 20mA
R
= 20V
= 6V
C
= 100 μ A,
CE
CE
= 2V
= 2V
MIN.
40
−
−
−
−
−
−
TYP.
1.2
85
20
20
−
1
−
Sheet No.: D3-A02101EN
MAX.
100
130
500
100
100
1.4
10
(T
GP2S60
a
= 25˚C)
Unit
μ A
nA
μ A
nA
μ s
V