EESX1109 Omron, EESX1109 Datasheet - Page 2

• Manufacturer Part Number: EESX1109
• Manufacturer: Omron
• Type: Transmissiver

Specifications of EESX1109

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 3mm
• Reverse Breakdown Voltage: 5V
• Collector-emitter Voltage: 20V
• Forward Current: 25mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 10000ns
• Rise Time: 10000ns
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -30C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

■ Engineering Data
132
Response Time vs. Load Resistance
Characteristics (Typical)
Response Time Measurement
Circuit
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Output
Input
Input
Collector−Emitter voltage V
Ambient temperature Ta (°C)
Load resistance R
Photomicrosensor (Transmissive)
90 %
10 %
I
I
F
F
= 5 mA
= 10 mA
V
Ta = 25°C
CC
Ta = 25°C
= 5 V
L
(kΩ)
Output
CE
(V)
Forward Current vs. Forward
Voltage Characteristics (Typical)
Relative Light Current vs. Ambient
Temperature Characteristics (Typical)
Sensing Position Characteristics
(Typical)
Ambient temperature Ta (°C)
EE-SX1107
Forward voltage V
Distance d (mm)
I
V
F
F
I
V
CE
= 5 mA
F
(V)
CE
= 5 mA
= 5 V
= 5 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient Tem-
perature Characteristics (Typical)
Sensing Position Character-
istics (Typical)
Ambient temperature Ta (°C)
Forward current I
Distance d (mm)
V
CE
= 10 V
Ta = 25°C
V
CE
F
I
V
F
CE
= 5 mA
(mA)
= 5 V
= 5 V
V
CE
=2 V