EESX1070 Omron, EESX1070 Datasheet - Page 2

• Manufacturer Part Number: EESX1070
• Manufacturer: Omron
• Type: Transmissiver

Specifications of EESX1070

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 8mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 4V
• Collector-emitter Voltage: 30V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 4000ns
• Rise Time: 4000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 95C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

■ Engineering Data
116
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Collector Emitter
Voltage Characteristics (Typical)
Response Time vs. Load Resis-
tance Characteristics (Typical)
Response Time Measurement
Circuit
60
50
40
30
20
10
Output
0
Input
Input
40
Collector Emitter voltage V
Ambient temperature Ta ( C)
20
P
Load resistance R
I
F
C
Photomicrosensor (Transmissive)
0
20
90 %
10 %
40
60
I
I
I
I
I
L
F
F
F
F
F
= 50 mA
= 40 mA
= 30 mA
= 20 mA
= 10 mA
(k )
Ta = 25 C
V
Ta = 25 C
80
CC
CE
= 5 V
Output
100
(V)
150
100
50
0
Forward Current vs. Forward
Voltage Characteristics (Typical)
Sensing Position Characteristics
(Typical)
Relative Light Current vs.
Ambient Temperature Character-
istics (Typical)
EE-SX1070
Ambient temperature Ta ( C)
Forward voltage V
Distance d (mm)
Ta = 30 C
Ta = 25 C
Ta = 70 C
(Center of
optical axis)
I
V
Ta = 25 C
F
F
CE
= 20 mA
I
V
(V)
F
CE
= 10 V
= 20 mA
= 5 V
Light Current vs. Forward Current
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
120
100
80
60
40
20
0
Sensing Position Characteristics
(Typical)
2.0
Ambient temperature Ta ( C)
V
0 lx
1.5
CE
Forward current I
= 10 V
1.0
Distance d (mm)
0.5
0
d
0.5
F
I
V
Ta = 25 C
F
CE
Ta = 25 C
V
= 20 mA
(mA)
1.0
CE
= 10 V
= 10 V
1.5
2.0