GP2S700HCP Sharp Electronics, GP2S700HCP Datasheet - Page 6

• Manufacturer Part Number: GP2S700HCP
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP2S700HCP

• Number Of Elements: 1
• Output Device: Phototransistor
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: SMT
• Collector Current (dc) (max): 20mA
• Power Dissipation: 100mW
• Fall Time: 100000ns
• Rise Time: 100000ns
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

■ Design Considerations
● Design guide
● Degradation
● Parts
• Light detector (qty. : 1)
• Light emitter (qty. : 1)
• Material
Infrared light emitting diode
Phototransister
1) Regarding to prevation of malfunction
2) Distance characteristic
3) For wiring on a mounting PCB
4) Regarding to mounting this product
This product is not designed against irradiation and incorporates non-coherent IRED.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
This product is assembled using the below parts.
Category
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face
to the external light. Also, if some other electronic components are located close to this device, false
operation may occur.
(The light reflection caused by the other components may slip into the photodetecting portion of the
device and if may cause false operation.)
To avoid possibility for short, please do not apply pattern wiring on the back side of the device.
There is a possibility that the opaque molded resin portion may have a crack by force at mounting etc.
Please use this product after well confi rmation of conditions in your production line.
And please confi rm the mounting workability beforehand when using the automatic mounting machine.
The distance between the photointerrupter and the object to be detected shall be determined the distance
by referencing Fig.8 "Relative collector current vs. distance".
Black epoxy resin
(non-coherent)
Category
Case
Silicon (Si)
Material
Gallium arsenide (GaAs)
Glass epoxy resin
Maximum Sensitivity
Material
wavelength (nm)
PCB
930
6
Maximum light emitting
wavelength (nm)
Lead frame plating
wavelength (nm)
Au plating
700 to 1 200
950
Sensitivity
I/O Frequency (MHz)
Response time (μs)
Sheet No.: D3-A02201EN
0.3
GP2S700HCP
20