SI8421BB-C-IS Silicon Laboratories Inc, SI8421BB-C-IS Datasheet
SI8421BB-C-IS
Specifications of SI8421BB-C-IS
Related parts for SI8421BB-C-IS
SI8421BB-C-IS Summary of contents
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Features High-speed operation DC to 150 Mbps Low propagation delay <10 ns worst case Wide Operating Supply Voltage: 2.70–5.5 V ...
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Si8410/20/21 2 Rev. 1.2 ...
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T C ABLE O F ONTENTS Section 1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Si8410/20/21 1. Electrical Specifications Table 1. Electrical Characteristics ( ±10 ±10%, T DD1 DD2 A Symbol Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage ...
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Table 1. Electrical Characteristics (Continued ±10 ±10%, T DD1 DD2 A Parameter Symbol 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8410Bx ...
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Si8410/20/21 Table 1. Electrical Characteristics (Continued ±10 ±10%, T DD1 DD2 A Parameter Symbol Si8410Ax, Si8420Ax, Si8421Ax Maximum Data Rate Minimum Pulse Width Propagation Delay t PHL Pulse Width Distortion |t - ...
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Table 2. Electrical Characteristics (V = 3.3 V ±10 3.3 V ±10%, T DD1 DD2 Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input Leakage Current 1 Output Impedance ...
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Si8410/20/21 Table 2. Electrical Characteristics (Continued 3.3 V ±10 3.3 V ±10%, T DD1 DD2 Parameter 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) Si8410Bx V ...
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Table 2. Electrical Characteristics (Continued 3.3 V ±10 3.3 V ±10%, T DD1 DD2 Parameter Si8410Bx, Si8420Bx, Si8421Bx Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width Distortion |t – PLH PHL 2 ...
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Si8410/20/21 Table 3. Electrical Characteristics ( –40 to 125 °C) DD1 DD2 A Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage Input ...
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Table 3. Electrical Characteristics ( –40 to 125 °C) DD1 DD2 A Parameter 10 Mbps Supply Current (All inputs = 5 MHz square wave all outputs) ...
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Si8410/20/21 Table 3. Electrical Characteristics ( –40 to 125 °C) DD1 DD2 A Parameter Si8410Bx, Si8420Bx, Si8421Bx Maximum Data Rate Minimum Pulse Width Propagation Delay Pulse Width Distortion | ...
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Table 4. Absolute Maximum Ratings Parameter 2 Storage Temperature Operating Temperature 3 Supply Voltage (Revision C) 3 Supply Voltage (Revision D) Input Voltage Output Voltage Output Current Drive Channel Lead Solder Temperature (10 s) Maximum Isolation Voltage (1 s) Notes: ...
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Si8410/20/21 Table 7. Insulation and Safety-Related Specifications Parameter 1 Nominal Air Gap (Clearance) Nominal External Tracking (Creepage) Minimum Internal Gap (Internal Clearance) Tracking Resistance (Comparative Tracking Index) 2 Resistance (Input-Output) 2 Capacitance (Input-Output) 3 Input Capacitance Notes: 1. The values ...
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Table 9. IEC 60747-5-2 Insulation Characteristics for Si84xxxB* Parameter Maximum Working Insulation Voltage Input to Output Test Voltage Highest Allowable Overvoltage (Transient Overvoltage sec) TR Pollution Degree (DIN VDE 0110, Table 1) Insulation Resistance ...
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Si8410/20/21 Table 11. Thermal Characteristics Parameter IC Junction-to-Air Thermal Resistance 400 320 300 270 200 160 100 0 0 Figure 2. (NB SOIC-8) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 Table 12. ...
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Typical Performance Characteristics The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to Tables 1, 2, and 3 for actual specification limits ...
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Si8410/20/21 3. Application Information 3.1. Theory of Operation The operation of an Si84xx channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This simple architecture provides a robust isolated data path ...
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Eye Diagram Figure 11 illustrates an eye-diagram taken on an Si8410. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8410 ...
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Si8410/20/21 3.3. Layout Recommendations Dielectric isolation is a set of specifications produced by safety regulatory agencies from around the world, which describes the physical construction of electrical equipment that derives power from high-voltage power systems, such as 100–240 V systems ...
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RF Radiated Emissions The Si841x and Si842x families use an RF carrier frequency of approximately 700 MHz. This results in a small amount of radiated emissions at this frequency and its harmonics. The radiation is not from the IC ...
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Si8410/20/21 4. Errata and Design Migration Guidelines (Revision C Only) The following errata apply to Revision C devices only. See "6. Ordering Guide" on page 24 for more details. No errata exist for Revision D devices. 4.1. Power Supply Bypass ...
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Pin Descriptions Si841x 1 V DD1 DD1 4 GND1 Top View Name SOIC-8 Pin# Si8410 V 1,3 DD1 GND1 DD2 GND2 5 ...
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... Si8421AB-C- Si8421BB-C-IS 1 Notes: 1. All packages are RoHS-compliant. Moisture sensitivity level is MSL2A with peak reflow temperature of 260 °C according to the JEDEC industry standard classifications and peak solder temperature. 2. Revision C devices are supported for existing designs, but Revision D is recommended for all new designs. ...
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Package Outline: 8-Pin Narrow Body SOIC Figure 15 illustrates the package details for the Si841x. Table 16 lists the values for the dimensions shown in the illustration. Figure 15. 8-pin Small Outline Integrated Circuit (SOIC) Package Table 16. Package ...
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Si8410/20/21 8. Landing Pattern: 8-Pin Narrow Body SOIC Figure 16 illustrates the recommended landing pattern details for the Si841x in an 8-pin narrow-body SOIC. Table 17 lists the values for the dimensions shown in the illustration. Figure 16. PCB Landing ...
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Top Marking Line 1 Marking: Base Part Number Ordering Options (See Ordering Guide for more information). Line 2 Marking Year WW = Workweek R = Product (OPN) Revision F = Wafer Fab Line 3 Marking: Circle = ...
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Si8410/20/ OCUMENT HANGE IST Revision 0.11 to Revision 0.21 Rev 0.21 is the first revision of this document that applies to the new series of ultra low power isolators featuring pinout and functional compatibility with previous ...
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N : OTES Si8410/20/21 Rev. 1.2 29 ...
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