CY7C277-50WMB Cypress Semiconductor Corp, CY7C277-50WMB Datasheet - Page 2

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CY7C277-50WMB

Manufacturer Part Number
CY7C277-50WMB
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C277-50WMB

Density
256Kb
Organization
32Kx8
Access Time (max)
25ns
Operating Current
130mA
Interface Type
Parallel
Package Type
Windowed CDIP
Operating Temperature Classification
Military
Operating Supply Voltage (typ)
5V
Operating Temp Range
-55C to 125C
Pin Count
28
Mounting
Through Hole
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Lead Free Status / RoHS Status
Not Compliant
Functional Description
The CY7C277 is a high-performance 32K word by 8-bit CMOS
PROMs. It is packaged in the slim 28-pin 300-mil package. The
ceramic package may be equipped with an erasure window;
when exposed to UV light, the PROM is erased and can then
be reprogrammed. The memory cells utilize proven EPROM
floating-gate technology and byte-wide algorithms.
The CY7C277 offers the advantages of low power, superior
performance, and high programming yield. The EPROM cell
requires only 12.5V for the supervoltage and low current re-
quirements allow for gang programming. The EPROM cells
allow for each memory location to be 100% tested, as each
location is written into, erased, and repeatedly exercised prior
to encapsulation. Each PROM is also tested for AC perfor-
mance to guarantee that the product will meet DC and AC
specification limits after customer programming.
On the 7C277, the outputs are pipelined through a mas-
ter-slave register. On the rising edge of CP, data is loaded into
the 8-bit edge triggered output register. The E/E
vides a programmable bit to select between asynchronous and
synchronous operation. The default condition is asynchro-
nous. When the asynchronous mode is selected, the E/E
operates as an asynchronous output enable. If the synchro-
nous mode is selected, the E/E
edge of CP to enable and disable the outputs. The 7C277 also
provides a programmable bit to enable the Address Latch in-
put. If this bit is not programmed, the device will ignore the ALE
pin and the address will enter the device asynchronously. If the
ALE function is selected, the address enters the PROM while
the ALE pin is active, and is captured when ALE is deasserted.
Electrical Characteristics
V
V
V
V
I
V
I
I
I
V
I
V
V
Notes:
IX
OZ
OS
CC
PP
1.
2.
3.
4.
5.
6.
Parameter
OH
OL
IH
IL
CD
PP
IHP
ILP
Contact a Cypress representative for industrial temperature range specifications.
T
See the last page of this specification for Group A subgroup testing information.
See “Introduction to CMOS PROMs” in this Book for general information on testing.
For devices using the synchronous enable, the device must be clocked after applying these voltages to perform this measurement.
For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.
A
is the “instant on” case temperature.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Level
Input LOW Level
Input Leakage Current
Input Clamp Diode Voltage
Output Leakage Current
Output Short Circuit Current
Power Supply Current
Programming Supply Voltage
Programming Supply Current
Input HIGH Programming Voltage
Input LOW Programming Voltage
Description
S
pin is sampled on the rising
Over the Operating Range
S
input pro-
V
V
Guaranteed Input Logical HIGH
Voltage for All Inputs
Guaranteed Input Logical LOW
Voltage for All Inputs
GND < V
0 < V
V
V
I
OUT
CC
CC
CC
CC
S
= Min., I
= Min., I
= Max., V
= Max., CS > V
= 0 mA
OUT
pin
Test Conditions
IN
< V
[3, 4]
2
< V
OH
OL
CC
OUT
The user may define the polarity of the ALE signal, with the
default being active HIGH.
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
Ambient Temperature with
Power Applied
Supply Voltage to Ground Potential
(Pin 24 to Pin 12)
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
DC Program Voltage (Pins 7, 18, 20) ........................... 13.0V
UV Erasure................................................... 7258 Wsec/cm
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
CC
Commercial
Industrial
Military
= 8.0 mA
, Output Disabled
= 2.0 mA
= 0.0V
IH
Range
[2]
Commercial
Military
[6]
[1]
[5]
Ambient Temperature
55 C to +125 C
Min.
40 C to +85 C
0 C to +70 C
2.4
2.0
3.0
7C277-30
12
10
40
20
Max.
V
+40
120
0.4
0.8
0.4
13
50
10
90
CC
Note 4
7C277-40, 50
Min.
2.4
2.0
3.0
12
10
40
20
65 C to +150 C
55 C to +125 C
CY7C277
0.5V to +7.0V
0.5V to +7.0V
3.0V to +7.0V
Max.
V
+10
+40
120
130
0.4
0.8
0.4
13
50
5V 10%
5V 10%
5V 10%
90
CC
V
CC
Unit
mA
mA
mA
V
V
V
V
V
V
V
A
A
2

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