AT28C64B-20DM/883 QP SEMICONDUCTOR, AT28C64B-20DM/883 Datasheet - Page 2
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AT28C64B-20DM/883
Manufacturer Part Number
AT28C64B-20DM/883
Description
Manufacturer
QP SEMICONDUCTOR
Datasheet
1.AT28C64B-20DM883.pdf
(13 pages)
Specifications of AT28C64B-20DM/883
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The AT28C64B is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
addresses and 1 to 64 bytes of data are internally latched,
freeing the address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will automat-
ically write the latched data using an internal control timer.
The end of a write cycle can be detected by DATA POLL-
ING of I/O
detected, a new access for a read or write can begin.
Block Diagram
Absolute Maximum Ratings*
2
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
7
. Once the end of a write cycle has been
AT28C64B
CC
+ 0.6V
Atmel’s AT28C64B has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability