MB85R1002PFTNGE1 Fujitsu Components, MB85R1002PFTNGE1 Datasheet - Page 12

• Manufacturer Part Number: MB85R1002PFTNGE1
• Manufacturer: Fujitsu Components
• Type: NVSRAMr

Specifications of MB85R1002PFTNGE1

• Word Size: 16b
• Density: 1Mb
• Interface Type: Parallel
• Access Time (max): 100ns
• Operating Supply Voltage (typ): 3.3V
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Pin Count: 48
• Mounting: Surface Mount
• Supply Current: 15mA
• Lead Free Status / RoHS Status: Compliant

MB85R1002
12
■ POWER ON/OFF SEQUENCE
■ NOTES ON USE
After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow.
CE1 LEVEL hold time for Power OFF
CE1 LEVEL hold time for Power ON
Power supply rising time
V
CE2
3.0 V
V
1.0 V
V
GND
* : CE1 (Max) < V
Notes: • Use either of CE1 or CE2, or both for disenable control of the device.
Parameter
IH
IL
CC
(Max)
(Min)
CE1
• Because turning the power on from an intermediate level may cause malfunctions,
• If the device does not operate within the specified conditions of read cycle, write cycle,
• When turning the power on or off, it is recommended that CE2 is connected to GND to
when the power is turned on, V
power on/off sequence, memory data can not be guaranteed.
prevent unexpected writing.
CE1 > V
CE2 ≤ 0.2 V
CC
tpd
+ 0.5 V
CC
× 0.8 *
Symbol
t
t
t
pd
pu
r
CE1 : Don't Care
CC
is required to be started from 0 V.
0.05
Min
85
85
tr
(within recommended operating conditions)
CE1 > V
Value
CC
× 0.8 *
tpu
Typ
⎯
⎯
⎯
CE1
Max
V
200
V
⎯
⎯
IL
IH
DS05-13104-6E
3.0 V
1.0 V
(Max)
GND
(Min)
CE2
V
CC
Unit
ns
ns
ms