MT16HTF12864AY-53EF1 Micron Technology Inc, MT16HTF12864AY-53EF1 Datasheet - Page 19

• Manufacturer Part Number: MT16HTF12864AY-53EF1
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864AY-53EF1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 50ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.216A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 14: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
Parameter
Operating bank interleave read current: All device banks inter-
leaving reads; I
t
t
bus inputs are stable during deselects; Data bus inputs are switching
CK (I
RCD
DD
DD
);
); CKE is HIGH, S# is HIGH between valid commands; Address
t
CK =
OUT
t
CK (I
= 0mA; BL = 4, CL = CL (I
DD
DD
Notes:
Specifications and Conditions (Die Revision E) – 2GB (Continued)
),
t
RC =
t
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
RC (I
in I
DD
DD2P
),
t
RRD =
(CKE LOW) mode.
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
DD
), AL =
t
RRD (I
t
RCD (I
DD
),
t
RCD =
DD
19
) - 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Sym-
I
bol
DD7
1
-1GA
3456
-80E/
-800
2736
© 2003 Micron Technology, Inc. All rights reserved.
-667
2296
I
DD
Specifications
2216
-53E
-40E Units
2136
mA