MT36HTF51272PY-80EG1 Micron Technology Inc, MT36HTF51272PY-80EG1 Datasheet - Page 8
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MT36HTF51272PY-80EG1
Manufacturer Part Number
MT36HTF51272PY-80EG1
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT36HTF51272PY-80EG1.pdf
(18 pages)
Specifications of MT36HTF51272PY-80EG1
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
512Mx72
Total Density
4GByte
Chip Density
1Gb
Access Time (max)
40ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
3.006A
Number Of Elements
36
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
Electrical Specifications
Table 7:
Input Capacitance
Component Timing and Operating Conditions
Table 8:
PDF: 09005aef818e3fc8/Source: 09005aef818e3fdb
HTF36C256_512x72.fm - Rev. C 1/07 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
/
OZ
V
I
C
I
1
DD
OUT
Q
Absolute Maximum Ratings
Module and Component Speed Grade Table
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
under test = 0V)
Output leakage current; 0V ≤ V
and ODT are disabled
V
DDR2 SDRAM device operating temperature
REF
REF
DD
/
Module Speed Grade
Notes:
V
input 0V ≤ V
leakage current; V
DD
Q supply voltage relative to V
Stresses greater than those listed in Table 7 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these, or any other
conditions above those indicated in each device’s data sheet, is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
1. Refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: Thermal Applications, available
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed using
simulations to close timing budgets.
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron’s Web site:
speed grades correlate with component speed grades as shown in Table 8.
-80E
-800
-667
-53E
-40E
on Micron’s Web site.
IN
≤ 0.95V; (All other pins not
REF
=
V
alid V
OUT
SS
2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
≤ V
REF
SS
DD
level
IN
Q; DQs
≤ V
2
DD
8
;
Command/Address
RAS#, CAS#, WE# S#,
CKE, ODT, BA
CK, CK#
DQ, DQS, DQS#
Commercial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
C
exceeds 85°C.
Component Speed Grade
Electrical Specifications
-25E
-37E
-25
-5E
-3
–0.50
–250
Min
www.micron.com.
–0.5
–10
–10
–72
©2005 Micron Technology, Inc. All rights reserved.
0
Max
250
+85
2.3
2.3
10
10
72
Module
Units
µA
µA
µA
°C
V
V