MT36HTF51272PY-80EE1 Micron Technology Inc, MT36HTF51272PY-80EE1 Datasheet - Page 10

• Manufacturer Part Number: MT36HTF51272PY-80EE1
• Manufacturer: Micron Technology Inc

Specifications of MT36HTF51272PY-80EE1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 512Mx72
• Total Density: 4GByte
• Chip Density: 1Gb
• Access Time (max): 40ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 3.006A
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 85C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 10:
PDF: 09005aef818e3fc8/Source: 09005aef818e3fdb
HTF36C256_512x72.fm - Rev. C 1/07 EN
Parameter/Condition
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current: All device banks open;
t
bus inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
valid commands; Other control and address bus inputs are switching; Data
bus inputs are switching
Operating burst write current: All device banks open; Continuous burst
writes; BL = 4, CL = CL (I
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
reads, I
MAX (I
commands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
(I
control and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks interleaving
reads, I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during DESELECTs; Data bus inputs are switching
RC =
CK =
RAS =
RP =
CK =
DD
DD
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
t
t
t
t
t
RP (I
RC (I
RCD =
CK (I
CK (I
DD
t
OUT
OUT
RAS MAX (I
),
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
t
= 0mA; BL = 4, CL = CL (I
DD
RP =
t
); CKE is HIGH, S# is HIGH between valid commands; Address
),
DDR2 I
Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the
1Gb (256 Meg x 4) component data sheet
RCD (I
); CKE is LOW; Other control and address
),
t
t
RAS =
DD
RC =
t
RP (I
), AL = 0;
Notes:
DD
DD
t
),
DD
t
DD
RC (I
); CKE is HIGH, S# is HIGH between valid commands;
RAS MIN (I
t
DD
RP =
t
); CKE is HIGH, S# is HIGH between valid
CK =
Specifications and Conditions – 4GB
), AL = 0;
DD
t
1. Value calculated as one module rank in this operating condition, all other module ranks in
2. Value calculated reflects all module ranks in this operating condition.
CK =
),
t
RP (I
t
CK (I
t
I
RRD =
DD
DD
t
2P (CKE LOW) mode.
CK (I
DD
DD
DD
); CKE is HIGH, S# is HIGH between valid
t
DD
CK =
); CKE is HIGH, S# is HIGH between
), AL = 0;
), AL =
); REFRESH command at every
t
DD
RRD (I
),
t
CK (I
t
RC =
t
DD
RCD (I
2GB, 4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
DD
t
),
CK =
t
),
t
RC (I
t
RCD =
CK =
t
t
DD
RAS =
CK =
t
CK =
t
CK (I
DD
) - 1 ×
t
CK (I
),
t
t
t
RCD (I
OUT
CK (I
CK =
t
t
DD
t
DD
t
CK (I
RAS MAX (I
RAS =
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
CK =
10
t
4W
DD
),
CK (I
= 0mA;
DD
t
t
),
DD
DD
RAS =
CK (I
t
),
CK (I
t
DD
); CKE is
); CKE is
RAS MIN
);
t
DD
RFC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
t
DD
RAS
);
);
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
1
1
2
2
1
2
2
1
2
2
2
1
1,746 1,656 1,386 1,386
2,106 1,926 1,836 1,746
1,800 1,440 1,440 1,260
1,800 1,440 1,440 1,260
1,440 1,080 1,080 1,080
2,160 1,980 1,620 1,440
3,006 2,556 2,376 2,016
3,006 2,556 2,376 2,016
8,460 7,740 7,560 7,380
6,156 5,166 4,986 4,806
-80E
-800
252
360
252
Electrical Specifications
-667
252
360
252
©2005 Micron Technology, Inc. All rights reserved.
-53E
252
360
252
-40E
252
360
252
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA