MT36JBZS51272PY-1G1D1 Micron Technology Inc, MT36JBZS51272PY-1G1D1 Datasheet

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MT36JBZS51272PY-1G1D1

Manufacturer Part Number
MT36JBZS51272PY-1G1D1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT36JBZS51272PY-1G1D1

Main Category
DRAM Module
Sub-category
DDR3 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
512Mx72
Total Density
4GByte
Chip Density
1Gb
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Operating Current
3.15A
Number Of Elements
36
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
DDR3 SDRAM VLP RDIMM
MT36JBZS51272P – 4GB
For component data sheets, refer to Micron’s Web site:
Features
• DDR3 functionality and operations supported as
• 240-pin, very low profile registered dual in-line
• Compatible with ATCA form factors
• Fast data transfer rates: PC3-10600, PC3-12800,
• 4GB (512 Meg x 72)
• Vdd = 1.5V ±0.075V
• Vddspd = +3.0V to +3.6V
• Supports ECC error detection and correction
• Nominal and dynamic on-die termination (ODT) for
• Dual rank, using 2Gb TwinDie™ devices
• 8 internal device banks
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
• On-board I
• Gold edge contacts
• Lead-free
• Fly-by topology
• Terminated control, command, and address bus
Table 1:
PDF: 09005aef8328da34/Source: 09005aef8328daed
JBZS36C512x72PY.fm - Rev. C 12/08 EN
Speed
Grade
defined in the component data sheet
memory module (VLP RDIMM)
PC3-8500, or PC3-6400
data and strobe signals
via the mode register set (MRS)
serial presence-detect (SPD) EEPROM
-1G6
-1G4
-1G3
-1G1
-1G0
-80C
-80B
Nomenclature
PC3-12800
PC3-10600
PC3-10600
2
Key Timing Parameters
Industry
PC3-8500
PC3-8500
PC3-6400
PC3-6400
C temperature sensor with integrated
Products and specifications discussed herein are subject to change by Micron without notice.
CL = 11
1600
CL = 10
1333
1333
1333
4GB (x72, ECC, DR): 240-Pin DDR3 SDRAM VLP RDIMM
CL = 9 CL = 8 CL = 7 CL = 6 CL = 5
Data Rate (MT/s)
1333
www.micron.com
1066
1066
1066
1066
1066
1
Figure 1:
Notes: 1. Contact Micron for industrial temperature
PCB height: 17.9mm (0.705in)
Options
• Operating temperature
• Package
• Frequency/CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 240-pin DIMM (lead-free)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.5ns @ CL = 10 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
– 1.87ns @ CL = 8 (DDR3-1066)
– 2.5ns @ CL = 5 (DDR3-800)
– 2.5ns @ CL = 6 (DDR3-800)
1066
1066
U1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Not recommended for new designs.
module offerings.
U2
800
800
800
800
800
800
800
240-Pin VLP RDIMM
(ATCA-Compatible R/C N)
U3
U4
800
U5
A
A
1
≤ +85°C)
≤ +70°C)
13.125
t
13.75
(ns)
13.5
12.5
RCD
©2008 Micron Technology, Inc. All rights reserved.
15
15
15
U6
2
2
2
2
U7
13.125
13.75
(ns)
13.5
12.5
t
U8
15
15
15
RP
Marking
Features
U9
None
-1G6
-1G4
-1G3
-1G1
-1G0
-80C
-80B
Y
I
50.625
48.75
(ns)
49.5
52.5
52.5
t
U10
51
50
RC

Related parts for MT36JBZS51272PY-1G1D1

MT36JBZS51272PY-1G1D1 Summary of contents

Page 1

... Features • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, very low profile registered dual in-line memory module (VLP RDIMM) • Compatible with ATCA form factors • Fast data transfer rates: PC3-10600, PC3-12800, PC3-8500, or PC3-6400 • 4GB (512 Meg x 72) • ...

Page 2

... The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT36JBZS51272PY-1G1D1. PDF: 09005aef8328da34/Source: 09005aef8328daed JBZS36C512x72PY.fm - Rev. C 12/08 EN ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignments 240-Pin DDR3 VLP RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 VrefDQ 31 DQ25 61 2 Vss 32 Vss 62 3 ...

Page 4

... Input with write data. Center-aligned with write data. SDA I/O Serial data: SDA is a bidirectional pin used to transfer addresses and data into and out of the temperature sensor/SPD EEPROM on the module on the I Err_Out# Output Parity error output: Parity error found on the command and address bus. ...

Page 5

... NC – No connect: These pins are not connected on the module. NF – No function: Connected within the module, but provides no functionality. PDF: 09005aef8328da34/Source: 09005aef8328daed JBZS36C512x72PY.fm - Rev. C 12/08 EN 4GB (x72, ECC, DR): 240-Pin DDR3 SDRAM VLP RDIMM Pin Assignments and Descriptions Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram Vss RS0# RS1# DQS0 DQS0# DM CS# DQS DQS# DQ0 DQ DQ1 U1b DQ DQ2 DQ DQ3 DQ Vss ZQ DQS1 DQS1# DM CS# DQS DQS# DQ8 DQ DQ9 DQ U2b DQ10 ...

Page 7

... DRAM is connected to a single trace and terminated (rather than a tree structure, where the termination is off the module near the connector). Inherent to fly-by topology, the timing skew between the clock and DQS signals can be easily accounted for by using the write-leveling feature of DDR3 ...

Page 8

... Platform Memory Module Thermal Sensor Component Specifica- tion.” Serial Presence-Detect EEPROM Operation DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JEDEC specification JC-45 “Appendix X: Serial Presence-Detect (SPD) for DDR3 SDRAM Modules.” ...

Page 9

... Electrical Specifications Stresses greater than those listed in Table 6 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 10

... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 11

Idd Specifications Table 9: DDR3 Idd Specifications and Conditions – 4GB Values are for the MT41J512M4THR DDR3 SDRAM only and are computed from values specified in the 2Gb TwinDie (512 Meg x 4) component data sheet Parameter Operating current 0: ...

Page 12

... Notes: 1. Timing and switching specifications for the register listed above are critical for proper oper- ation of the DDR3 SDRAM RDIMMs. These are meant subset of the parameters for the specific device used on the module. PDF: 09005aef8328da34/Source: 09005aef8328daed JBZS36C512x72PY.fm - Rev. C 12/08 EN 4GB (x72, ECC, DR): 240-Pin DDR3 SDRAM VLP RDIMM ...

Page 13

... Temperature Sensor with Serial Presence-Detect EEPROM The temperature sensor continuously monitors the module’s temperature and can be read back at any time over the I Table 11: Temperature Sensor with Serial Presence-Detect EEPROM Operating Conditions Parameter/Condition Supply voltage Supply current: Vdd = 3.3V Input high voltage: Logic 1; SCL, SDA Input low voltage: Logic 0 ...

Page 14

The compare mode is similar to the interrupt mode, except EVENT# cannot be reset by the user and only returns to the logic HIGH state when the temperature falls below the programmed thresholds. Critical temperature mode triggers EVENT# only when ...

Page 15

Table 13: Temperature Sensor Registers Name Pointer register Capability register Configuration register Alarm temperature upper boundary register Alarm temperature lower boundary register Critical temperature register Temperature register Pointer Register The pointer register selects which of the 16-bit registers is being ...

Page 16

Capability Register The capability register indicates the features and functionality supported by the temper- ature sensor. This register is a read-only register. Table 16: Capability Register (Address: 0x00 RFU RFU 7 6 RFU RFU Table 17: Capability Register ...

Page 17

Table 19: Configuration Register Bit Descriptions Bit Description 0 Event mode 0: Comparator mode 1: Interrupt mode 1 EVENT# polarity 0: Active LOW 1: Active HIGH 2 Critical event only 0: EVENT# trips on alarm or critical temperature event 1: ...

Page 18

Figure 4: Hysteresis Below window bit Above window bit Notes the value set in the alarm temperature lower boundary trip register Hyst is the value set in ...

Page 19

Temperature Format The temperature trip point registers and temperature readout register use a “2’s complement” format to enable negative numbers. The least significant bit (LSB) is equal to 0.0625°C or 0.25°C depending on which register is referenced example, ...

Page 20

Temperature Register The temperature register is a read-only register that provides the current temperature detected by the temperature sensor. The LSB for this register is 0.0625°C with a resolu- tion of 0.0625°C. The most significant bit (MSB) is 128°C in ...

Page 21

... U17 U17 U17 U18 U18 U18 U15 U15 Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 Module Dimensions U9 U10 18.0 (0.709) 17.8 (0.701) 9.5 (0.374) 0.8 (0.031) TYP TYP Pin 120 U19 U20 3.0 (0.118) x4 TYP Pin 121 47 ...

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