M368L6423FTNCB3 Samsung Semiconductor, M368L6423FTNCB3 Datasheet - Page 11

• Manufacturer Part Number: M368L6423FTNCB3
• Manufacturer: Samsung Semiconductor

Specifications of M368L6423FTNCB3

• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.72A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Not Compliant

7.0 Absolute Maximum Ratings
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
8.0 DC Operating Conditions
Recommended operating conditions(Voltage referenced to V
Note :
1. V
2. V
3. V
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,
128MB, 256MB, 512MB Unbuffered DIMM
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage(for device with a nominal V
Supply voltage(for device with a nominal V
I/O Supply voltage(for device with a nominal V
I/O Supply voltage(for device with a nominal V
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input leakage current
Output leakage current
Output High Current(Normal strengh driver) ;V
Output High Current(Normal strengh driver) ;V
Output High Current(Half strengh driver) ;V
Output High Current(Half strengh driver) ;V
not exceed +/-2% of the dc value.
variations in the DC level of V
for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers
due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to
source voltages from 0.1 to 1.0.
REF
TT
ID
is not applied directly to the device. V
is the magnitude of the difference between the input level on CK and the input level on CK.
is expected to be equal to 0.5*V
DD
Parameter
& V
DDQ
supply relative to V
REF
SS
Parameter
.
DDQ
TT
of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on V
is a system supply for signal termination resistors, is expected to be set equal to V
SS
DD
DD
OUT
OUT
of 2.5V for DDR333)
of 2.6V for DDR400)
DD
DD
OUT
OUT
= V
= V
of 2.5V for DDR333)
of 2.6V for DDR400)
= V
TT
= V
TT
+ 0.45V
TT
- 0.45V
TT
+ 0.84V
- 0.84V
SS
=0V, T
V
V
Symbol
DD ,
IN ,
T
I
P
STG
OS
V
V
D
A
OUT
DDQ
=0 to 70°C)
Symbol
VI(Ratio)
V
V
V
V
V
V
V
IH
IN
ID
IL
V
V
V
I
I
I
I
I
DDQ
DDQ
REF
OH
OH
(DC)
OZ
OL
OL
(DC)
(DC)
(DC)
I
DD
DD
TT
I
0.49*VDDQ
V
V
REF
REF
1.5 * # of component
-16.8
0.36
0.71
Min
16.8
-0.3
-0.3
2.3
2.5
2.3
2.5
-2
-5
-9
9
+0.15
-0.04
-55 ~ +150
-0.5 ~ 3.6
-1.0 ~ 3.6
Value
50
Rev. 1.3 July 2005
0.51*VDDQ
V
V
V
V
V
REF
REF
DDQ
DDQ
DDQ
Max
2.7
2.7
2.7
2.7
1.4
2
5
+0.04
-0.15
DDR SDRAM
+0.3
+0.3
+0.6
REF
, and must track
Unit
mA
mA
mA
mA
uA
uA
V
V
V
V
V
V
V
V
V
V
-
Unit
mA
°C
W
V
V
REF
Note
may
1
2
3
4