321006ES51G02 PNY TECHNOLOGIES, 321006ES51G02 Datasheet - Page 4

• Manufacturer Part Number: 321006ES51G02
• Manufacturer: PNY TECHNOLOGIES

Specifications of 321006ES51G02

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Absolute Maximum Ratings
NOTE:
DC Characteristics (T
DC Current Consumption (T
Parameter
Standby Current (TTL)
Standby Current (CMOS)
Operating Current Random Read/Write
Operating Current Fast Page Mode
Operating Current EDO Page Mode
Refresh Current: RAS#-Only
Refresh Current: CAS# before RAS#
Parameter
Voltage on any pin relative to Vss
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Parameter
Supply voltage
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
1Mx32 5V EDO SIMM
DS361-40 – 9/19/00
Permanent damage may occur if absolute maximum ratings are exceeded.
Device should be operated within recommended operating conditions only.
A
= 0 to 70C, Vcc = 5.0V
Symbol
I
I
I
I
I
I
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
A
= 0 to 70C, Vcc = 5.0V
RAS# = V
RAS# = V
RAS#, CAS#, address cycling. t
RAS#, CAS#, address cycling t
Symbol
RAS# cycling, CAS#=V
T
V
I
T
Pt
out
opr
in
st
Symbol
IL
IL
, CAS#, Address cycling. t
, CAS#, Address cycling. t
Vcc
Voh
Vss
Vih
Vol
Vil
All inputs = Vcc - 0.2V
(RAS# = CAS# = V
Test Condition
4
0.5V)
Min
-1.0
4.5
2.4
2.4
0
-
IH
; t
RC
IH
-1.0 to 7.0V
-55 to +125
0.5V)
RC
)
RC
0 to +70
= t
Value
= t
= t
RC[MIN]
50
PC
PC
2
RC[MIN]
RC[MIN]
Typ
= t
= t
5.0
0
-
-
-
-
PC[MIN]
PC[MIN]
PNY Technologies Reserves the right to change product or specifications without notice
Vcc+1.0V
Max
5.5
0.8
0.4
-
0
N/A
254
254
254
-60
98
4
2
Units
V
V
V
V
V
V
1M x 32 Bit 5V
Units
mA
W
V
C
C
Unit
mA
mA
mA
mA
mA
mA
mA
EDO SIMM
Note
2000 PNY Technologies, Inc.
16
16
16
17, 18
17, 18
17, 18
Note
17
17
17
17