MT45W8MW16BGX-708 WT Micron Technology Inc, MT45W8MW16BGX-708 WT Datasheet - Page 19
MT45W8MW16BGX-708 WT
Manufacturer Part Number
MT45W8MW16BGX-708 WT
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W8MW16BGX-708_WT.pdf
(68 pages)
Specifications of MT45W8MW16BGX-708 WT
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 13:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
(except A[19:18])
A[19:18]
DQ[15:0]
LB#/UB#
A[22:0]
ADV#
WAIT
WE#
Configuration Register WRITE, Synchronous Mode Followed by READ ARRAY Operation
OE#
CLK
CRE
CE#
2
Notes:
Latch Control Register Value
High-Z
1. Non-default BCR settings for synchronous mode configuration register WRITE followed by
2. A[19:18] = 00b to load RCR, and 10b to load BCR.
3. CE# must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—addi-
t CSP
OPCODE
t CEW
t SP
t SP
t SP
t SP
READ ARRAY operation: Latency code two (three clocks); WAIT active LOW; WAIT asserted
during delay.
tional WAIT cycles caused by refresh collisions require a corresponding number of addi-
tional CE# LOW cycles.
t HD
t HD
t HD
t HD
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
Latch Control Register Address
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
t CBPH 3
High-Z
Address
Address
©2004 Micron Technology, Inc. All rights reserved.
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