M29F800FB5AN6E2 NUMONYX, M29F800FB5AN6E2 Datasheet - Page 24

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M29F800FB5AN6E2

Manufacturer Part Number
M29F800FB5AN6E2
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M29F800FB5AN6E2

Cell Type
NOR
Density
8Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20/19Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
20mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

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3.5
3.6
3.7
3.8
24/67
Automatic Standby
If CMOS levels (V
more the memory enters Automatic Standby where the internal Supply Current is reduced to
the Standby Supply Current, I
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require V
applied to some pins.
Electronic Signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in
Bus Operations, BYTE = VIL
Block Protection and Block Unprotection
Each block can be separately protected against accidental Program or Erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. Block Protect and Blocks
Unprotect operations are described in
CC
± 0.2V) are used to drive the bus and the bus is inactive for 150ns or
and
CC2
. The Data Inputs/Outputs will still output data if a Bus
Table 3.: Bus Operations, BYTE =
Appendix C: Block
protection.
VIH.
ID
Table 2.:
to be

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