M25P40-VMW6GB NUMONYX, M25P40-VMW6GB Datasheet - Page 41
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M25P40-VMW6GB
Manufacturer Part Number
M25P40-VMW6GB
Description
Manufacturer
NUMONYX
Datasheet
1.M25P40-VMW6GB.pdf
(61 pages)
Specifications of M25P40-VMW6GB
Cell Type
NOR
Density
4Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 85C
Package Type
SO W
Program/erase Volt (typ)
2.3 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
512K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Compliant
Table 17.
1. 150 nm technology devices are identified by process identification digit "X" in the device marking.
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
Table 18.
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC measurement I/O waveform
Symbol
Symbol
t
PP
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256)
t
t
t
SE
BE
W
C
—
—
—
—
(2)
L
Load capacitance
Input rise and fall times
Input pulse voltages
Input timing reference voltages
Output timing reference voltages
Alt.
AC measurement conditions
Instruction times, process technology 150 nm
—
—
—
—
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Bulk Erase cycle time
0.8V CC
0.2V CC
Input Levels
Test conditions specified in
Parameter
Parameter
Table 10
Timing Reference Levels
Input and Output
and
Min.
Min.
0.2V
0.3V
—
—
—
—
—
—
Table 18
(1)
CC
CC
V
0.7V CC
0.5V CC
0.3V CC
AI07455
CC
0.4+n*1/
30
to 0.8V
to 0.7V
256
Typ.
/ 2
1.4
4.5
5
1
(2)
Max.
CC
CC
5
Max.
15
10
5
3
Unit
pF
ns
Unit
V
V
V
ms
ms
41/61
s
s