K4H560838F-ULB3 Samsung Semiconductor, K4H560838F-ULB3 Datasheet - Page 20
![no-image](/images/manufacturer_photos/0/5/578/samsung_semiconductor_sml.jpg)
K4H560838F-ULB3
Manufacturer Part Number
K4H560838F-ULB3
Description
Manufacturer
Samsung Semiconductor
Type
DDR SDRAMr
Datasheet
1.K4H560838F-ULB3.pdf
(23 pages)
Specifications of K4H560838F-ULB3
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
160mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input
into simulation tools. The driver characteristcs evaluation conditions are:
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity
DDR SDRAM 256Mb F-die (x8, x16) Pb-Free
IBIS :I/V Characteristics for Input and Output Buffers
the of the V-I curve of Figure 3 and 4.
source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Typical
Minimum
Maximum
- 1 0 0
- 1 2 0
- 1 4 0
- 1 6 0
- 1 8 0
- 2 0 0
- 2 2 0
160
140
120
100
- 2 0
- 4 0
- 6 0
- 8 0
80
60
40
20
0
0
0.0
0 .0
Pulldown Characteristics for Full Strength Output Driver
Pullup Characteristics for Full Strength Output Driver
25×C
70×C
0×C
0.5
Vdd/Vddq = 2.5V, typical process
Vdd/Vddq = 2.3V, slow-slow process
Vdd/Vddq = 2.7V, fast-fast process
1.0
1 .0
1.5
2.0
2 .0
2.5
Rev. 1.2 October, 2004
Vout(V)
Vout(V)
+/-
Typical High
Minumum
Typical Low
Maximum
Typical Low
Typical High
Maximum
Minimum
DDR SDRAM
10%, for device drain to