K4S280832E-TC75 Samsung Semiconductor, K4S280832E-TC75 Datasheet - Page 14

• Manufacturer Part Number: K4S280832E-TC75
• Manufacturer: Samsung Semiconductor
• Type: SDRAMr

Specifications of K4S280832E-TC75

• Organization: 16Mx8
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 110mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Not Compliant

SDRAM 128Mb E-die (x4, x8, x16)
SIMPLIFIED TRUTH TABLE
Register
Refresh
Bank active & row addr.
Read &
column address
Write &
column address
Burst stop
Precharge
Clock suspend or
active power down
Precharge power down mode
DQM
No operation command
Notes :
1. OP Code : Operand code
2. MRS can be issued only at all banks precharge state.
3. Auto refresh functions are as same as CBR refresh of DRAM.
4. BA
5. During burst read or write with auto precharge, new read/write command can not be issued.
6. Burst stop command is valid at every burst length.
7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
A
A new command can be issued after 2 CLK cycles of MRS.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
If both BA
If BA
If BA
If both BA
If A
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
0
0
~ A
10
Command
~ BA
0
0
/AP is "High" at row precharge, BA
11
is "High" and BA
is "Low" and BA
Mode register set
Auto refresh
Self
refresh
Auto precharge disable
Auto precharge enable
Auto precharge disable
Auto precharge enable
Bank selection
All banks
& BA
1
0
0
: Bank select addresses.
and BA
and BA
0
~ BA
1
1
are "Low" at read, write, row active and precharge, bank A is selected.
are "High" at read, write, row active and precharge, bank D is selected.
1
: Program keys. (@ MRS)
1
1
Entry
Entry
Entry
is "High" at read, write, row active and precharge, bank C is selected.
Exit
Exit
Exit
is "Low" at read, write, row active and precharge, bank B is selected.
CKEn-1
H
H
H
H
H
H
H
H
H
H
H
L
L
L
0
and BA
CKEn
X
H
H
X
H
H
X
L
X
X
X
X
L
L
1
is ignored and all banks are selected.
CS
H
H
X
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
RP
RAS
after the end of burst.
X
H
H
H
H
H
H
L
X
X
V
X
X
X
V
X
L
L
L
CAS
H
X
H
H
H
X
V
X
X
H
X
V
X
H
L
L
L
L
(V=Valid, X=Don′t care, H=Logic high, L=Logic low)
WE
H
H
X
H
H
X
V
X
X
H
X
V
X
H
L
L
L
L
DQM
X
X
X
X
X
X
X
X
X
X
X
X
V
X
Rev. 1.4 February. 2004
BA
V
V
V
V
X
0,1
CMOS SDRAM
A
OP code
10
H
H
Row address
H
L
L
L
/AP
X
X
X
X
X
X
X
A
address
address
Column
Column
0
A
~ A
X
11,
9,
Note
1,2
4,5
4,5
3
3
3
3
4
4
6
7